Decoupling Edge Versus Bulk Conductance in the Trivial Regime of an InAs/GaSb Double Quantum Well Using Corbino Ring Geometry

A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range...

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Bibliographic Details
Published inPhysical review letters Vol. 117; no. 7; p. 077701
Main Authors Nguyen, Binh-Minh, Kiselev, Andrey A, Noah, Ramsey, Yi, Wei, Qu, Fanming, Beukman, Arjan J A, de Vries, Folkert K, van Veen, Jasper, Nadj-Perge, Stevan, Kouwenhoven, Leo P, Kjaergaard, Morten, Suominen, Henri J, Nichele, Fabrizio, Marcus, Charles M, Manfra, Michael J, Sokolich, Marko
Format Journal Article
LanguageEnglish
Published United States 12.08.2016
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Summary:A Corbino ring geometry is utilized to analyze edge and bulk conductance of InAs/GaSb quantum well structures. We show that edge conductance exists in the trivial regime of this theoretically predicted topological system with a temperature-insensitive linear resistivity per unit length in the range of 2  kΩ/μm. A resistor network model of the device is developed to decouple the edge conductance from the bulk conductance, providing a quantitative technique to further investigate the nature of this trivial edge conductance, conclusively identified here as being of n type.
ISSN:1079-7114
DOI:10.1103/PhysRevLett.117.077701