Growth of bismuth titanate films by chemical vapor deposition and chemical solution deposition

Bismuth titanate, Bi 4 Ti 3 O 12 (BIT) was grown via chemical vapor deposition (CVD) and chemical solution deposition (CSD). The BIT films were grown by CVD, with triphenylbismuth and titanium isopropoxide. BIT films were fabricated by CSD using a solution prepared with bismuth ethylhexanoate and ti...

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Bibliographic Details
Published inIntegrated ferroelectrics Vol. 21; no. 1-4; pp. 331 - 341
Main Authors Neumayer, Deborah A., Duncombe, Peter R., Laibowitz, Robert B., Shaw, Thomas, Purtell, Robert, Grill, Alfred
Format Journal Article
LanguageEnglish
Published Taylor & Francis Group 01.09.1998
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