Growth of bismuth titanate films by chemical vapor deposition and chemical solution deposition
Bismuth titanate, Bi 4 Ti 3 O 12 (BIT) was grown via chemical vapor deposition (CVD) and chemical solution deposition (CSD). The BIT films were grown by CVD, with triphenylbismuth and titanium isopropoxide. BIT films were fabricated by CSD using a solution prepared with bismuth ethylhexanoate and ti...
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Published in | Integrated ferroelectrics Vol. 21; no. 1-4; pp. 331 - 341 |
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Main Authors | , , , , , |
Format | Journal Article |
Language | English |
Published |
Taylor & Francis Group
01.09.1998
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Subjects | |
Online Access | Get full text |
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