Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 52; no. 8; pp. 1082 - 1085
• Main Authors: Babichev, A. V., Gladyshev, A. G., Kurochkin, A. S., Kolodeznyi, E. S., Sokolovskii, G. S., Bougrov, V. E., Karachinsky, L. Ya, Novikov, I. I., Bousseksou, A. G., Egorov, A. Yu
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.08.2018; Springer Nature B.V
• Subjects: ALLOYS; Cladding; CURRENT DENSITY; Current pulses; Epitaxial growth; INDIUM PHOSPHIDES; LANTHANUM SELENIDES; LASERS; Lasing; Magnetic Materials; Magnetism; MATERIALS SCIENCE; MOLECULAR BEAM EPITAXY; Molecular chains; Physics; Physics and Astronomy; Physics of Semiconductor Devices; Quantum cascade lasers; Room temperature; Substrates; TEMPERATURE RANGE 0273-0400 K; THRESHOLD CURRENT; Threshold currents; WAVELENGTHS

Room-temperature lasing at a wavelength of 8 μm in multistage quantum-cascade lasers pumped by current pulses is demonstrated. A quantum-cascade laser heterostructure based on the In 0.53 Ga 0.47 As/A l0.48 In 0.5 2As alloy heteropair, matched to an InP substrate, is grown by molecular-beam epitaxy...