Modelling of group-III nitride MOVPE in the closed coupled showerhead reactor and Planetary Reactor

• Published in: Journal of crystal growth Vol. 303; no. 1; pp. 318 - 322
• Main Authors: Martin, C., Dauelsberg, M., Protzmann, H., Boyd, A.R., Thrush, E.J., Heuken, M., Talalaev, R.A., Yakovlev, E.V., Kondratyev, A.V.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2007
• Subjects: A1. Computer simulation; A3. Closed coupled showerhead reactor; A3. Metal organic vapor-phase epitaxy; A3. Planetary Reactor; B1. Nitrides; A3. Metal organic vapor-phase epitaxy; B1. Nitrides; 82.20.Wt; A3. Closed coupled showerhead reactor; 81.10.Bk; 81.15.Kk; A1. Computer simulation; 81.15.Gh; A3. Planetary Reactor; 82.33.Ya; 81.05.Ea
• ISSN: 0022-0248; 1873-5002
• DOI: 10.1016/j.jcrysgro.2006.11.151

The modelling and subsequent experimental validation of nitride growth processes in commercial, production scale multi-wafer reactors is investigated with focus on group-III nitride compounds GaN and InGaN. The paper also deals with the development of group-III nitride growth processes at elevated process pressures, highlighting the effects of gas-phase nucleation phenomena on the growth efficiency of GaN. In addition, the latest hardware and process improvements to the Planetary Reactor ® technology are presented, with focus on the development using a modelling approach, of a new gas injector design for III-nitride growth. Subsequent experimental validation of the new injector design, and its flexibility to changing process regimes for GaN and InGaN will be demonstrated for the 42×2″ Planetary Reactor ®.