Growth of N-polarity InN by ArF-laser assisted MOVPE

In this paper, the employment of the ArF excimer‐laser assisted nitridation of sapphire substrate is studied in the ArF‐laser assisted MOVPE (la‐MOVPE) of InN. An ArF excimer laser with an energy 50 mJ/pulse and a repetition rate 20 Hz is introduced parallel to the substrate surface. The surface mor...

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Bibliographic Details
Published inPhysica status solidi. A, Applications and materials science Vol. 203; no. 1; pp. 112 - 115
Main Authors Yamamoto, A., Kasashima, K., Miyanishi, M., Hashimoto, A.
Format Journal Article
LanguageEnglish
Published Berlin WILEY-VCH Verlag 01.01.2006
WILEY‐VCH Verlag
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