Atomic surface structure of MOVPE-prepared GaP(111)B

• Published in: Applied surface science Vol. 534; p. 147346
• Main Authors: Kleinschmidt, P., Mutombo, P., Berthold, T., Paszuk, A., Steidl, M., Ecke, G., Nägelein, A., Koppka, C., Supplie, O., Krischok, S., Romanyuk, O., Himmerlich, M., Hannappel, T.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 30.12.2020
• Subjects: AES; DFT; Gallium phosphide; MOVPE-preparation; STM; XPS; MOVPE-preparation; XPS; DFT; Gallium phosphide; STM; AES

[Display omitted] •MOVPE preparation of GaP(111)B (phosphorus face).•Combination of STM, XPS, AES and AFM measurements with DFT calculations.•Atomic surface structure of GaP(111)B revealed.•Dangling bonds of partially hydrogen-terminated phosphorus face imaged. Controlling the surface formation of t...