Influence of strain on solid–liquid phase equilibrium in heteroepitaxy of SiGe/Si(0 0 1)

• Published in: Journal of crystal growth Vol. 289; no. 1; pp. 366 - 369
• Main Authors: Teubner, Thomas, Boeck, Torsten
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.03.2006; Elsevier
• Subjects: A1. Phase equilibria; A1. Segregation; A1. Stresses; A1. Supersaturated solutions; A3. Liquid phase epitaxy; B1. Germanium silicon alloys; Condensed matter: structure, mechanical and thermal properties; Defects and impurities in crystals; microstructure; Elasticity, elastic constants; Exact sciences and technology; Linear defects: dislocations, disclinations; Mechanical and acoustical properties of condensed matter; Mechanical properties of solids; Physics; Structure of solids and liquids; crystallography; A1. Phase equilibria; 81.05.Cy; B1. Germanium silicon alloys; 64.70.Dv; A1. Stresses; 81.40.Jj; A3. Liquid phase epitaxy; A1. Segregation; 81.15.Lm; A1. Supersaturated solutions; 82.60.Lf; 81.10.Dn; Inorganic compounds; Misfit dislocations; Films; Phase equilibria; Stress effects; Strain energy; Crystallization; Theoretical study; Binary compounds; Lattice parameters; Lattice relaxation; Silicon Germanides; Quantity ratio; Strained layer; Pseudomorphic growth; 82.60.Lf A1. Phase equilibria; Heteroepitaxy

A heteroepitaxially grown layer with a lattice constant different from that of substrate is subject to strain. If this strain cannot be released by misfit dislocations or surface undulation a pseudomorphic strained layer with lattice relaxation in growth direction will be formed. A simple model has...