Kinematic analysis of in situ measurement during chemical mechanical planarization process

• Published in: Review of scientific instruments Vol. 86; no. 10; p. 105118
• Main Authors: Li, Hongkai, Wang, Tongqing, Zhao, Qian, Meng, Yonggang, Lu, Xinchun
• Format: Journal Article
• Language: English
• Published: United States American Institute of Physics 01.10.2015
• Subjects: Chemical-mechanical polishing; CONTROL SYSTEMS; In situ measurement; INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY; Kinematics; MANUFACTURING; Mathematical models; Organic chemistry; PROBES; PRODUCTIVITY; Scientific apparatus & instruments; SEMICONDUCTOR MATERIALS; SURFACES; TRAJECTORIES; Trajectory measurement; VELOCITY

Chemical mechanical planarization (CMP) is the most widely used planarization technique in semiconductor manufacturing presently. With the aid of in situ measurement technology, CMP tools can achieve good performance and stable productivity. However, the in situ measurement has remained unexplored f...