Fabrication of ohmic contact based on platinum to p-type compositionally graded AlGaAs layers

• Published in: Journal of physics. Conference series Vol. 146; no. 1; p. 012034
• Main Authors: Macherzyński, W, Wośko, M, Paszkiewicz, B, Ściana, B, Paszkiewicz, R, Tłaczała, M
• Format: Journal Article
• Language: English
• Published: Bristol IOP Publishing 01.01.2009
• Subjects: Aluminum gallium arsenides; Annealing; Contact resistance; Current voltage characteristics; Electron guns; Epitaxial layers; Gold; Metallizing; Multilayers; Nickel; Physics; Platinum; Titanium

Novel metallization scheme was proposed for ohmic contact formation to compositionally graded p-type AlGaAs. A metal multilayers of Ti/Pt/Au, Pt/Ti/Pt/Au and Pt/Ti/Ni/Au were deposited by thermal evaporation using electron gun and resistance heater. The contacts were sequentially annealed by rapid t...