Growth of high-quality multi-crystalline silicon ingot by using Si particles embedded in the Si3N4 layer

• Published in: Journal of crystal growth Vol. 546; p. 125774
• Main Authors: Lei, Qi, He, Liang, Ming, Liang, Tang, Changxin, Rao, Senlin, Zhou, Lang
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.09.2020; Elsevier BV
• Subjects: A1. Directional solidification; A1. Dislocation; A1. Nucleation; B3. Solar cells; Carrier lifetime; Crystal defects; Crystal structure; Crystallinity; Ingots; Minority carriers; Nucleation; Photodegradation; Photovoltaic cells; Silicon; Silicon nitride; Solar cells; A1. Directional solidification; A1. Nucleation; A1. Dislocation; B3. Solar cells

•Si particles embedded in the Si3N4 layer as cost-effective seeds for growing high- quality mc-Si was introduced.•The ingot yield was increased by approximately 7% due to the significantly reduced red zone length.•The solar cells fabricated with the experiment wafers can achieve high cell efficiency...