Cu2ZnSnSe4 thin films prepared by selenization of one-step electrochemically deposited Cu–Zn–Sn–Se precursors

► Selenization one-step electrochemical deposition Cu–Zn–Sn–Se precursors to fabricate CZTSe thin films for the first time. ► Studied the effect of different rate of each element in electrolyte and the influence of pH. ► Prepared Cu2ZnSnSe4 that is pure and close to stoichiometric. ► Proved the stru...

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Published inApplied surface science Vol. 273; pp. 613 - 616
Main Authors Meng, Mingming, Wan, Lei, Zou, Peng, Miao, Shiding, Xu, Jinzhang
Format Journal Article
LanguageEnglish
Published Amsterdam Elsevier B.V 15.05.2013
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Abstract ► Selenization one-step electrochemical deposition Cu–Zn–Sn–Se precursors to fabricate CZTSe thin films for the first time. ► Studied the effect of different rate of each element in electrolyte and the influence of pH. ► Prepared Cu2ZnSnSe4 that is pure and close to stoichiometric. ► Proved the structure of CZTSe is Kesterite-type. In this research a non-vacuum strategy was reported in facile preparation of kesterite-type Cu2ZnSnSe4 (CZTSe) thin films via selenization of one-step electrochemically prepared Cu–Zn–Sn–Se precursors. The Cu–Zn–Sn–Se precursor films were prepared by electrochemical deposition from electrolytes containing CuSO4, ZnSO4, SnCl4 and H2SeO3, and the substrate is a Mo coated soda-lime glass. The CZTSe thin films were obtained by annealing the electrochemically deposited films in the selenium vapors at the temperature of 550°C. The crystal phases, micro-structures, chemical compositions and optical properties of CZTSe films have been studied by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), inductively coupled plasma optical emission spectrometer (ICP-OES), Raman scattering spectrum, and UV–vis absorption spectroscopic means. The results revealed that the electrolytes with Cu:Zn:Sn:Se molar ratio of 3:70:20:3 yields nearly pure phase of kesterite, and a band gap of 0.94eV was determined by spectroscopic measurements.
AbstractList In this research a non-vacuum strategy was reported in facile preparation of kesterite-type Cu2ZnSnSe4 (CZTSe) thin films via selenization of one-step electrochemically prepared Cu-Zn-Sn-Se precursors. The Cu-Zn-Sn-Se precursor films were prepared by electrochemical deposition from electrolytes containing CuSO4, ZnSO4, SnCl4 and H2SeO3, and the substrate is a Mo coated soda-lime glass. The CZTSe thin films were obtained by annealing the electrochemically deposited films in the selenium vapors at the temperature of 550 degree C. The crystal phases, micro-structures, chemical compositions and optical properties of CZTSe films have been studied by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), inductively coupled plasma optical emission spectrometer (ICP-OES), Raman scattering spectrum, and UV-vis absorption spectroscopic means. The results revealed that the electrolytes with Cu:Zn:Sn:Se molar ratio of 3:70:20:3 yields nearly pure phase of kesterite, and a band gap of 0.94eV was determined by spectroscopic measurements.
► Selenization one-step electrochemical deposition Cu–Zn–Sn–Se precursors to fabricate CZTSe thin films for the first time. ► Studied the effect of different rate of each element in electrolyte and the influence of pH. ► Prepared Cu2ZnSnSe4 that is pure and close to stoichiometric. ► Proved the structure of CZTSe is Kesterite-type. In this research a non-vacuum strategy was reported in facile preparation of kesterite-type Cu2ZnSnSe4 (CZTSe) thin films via selenization of one-step electrochemically prepared Cu–Zn–Sn–Se precursors. The Cu–Zn–Sn–Se precursor films were prepared by electrochemical deposition from electrolytes containing CuSO4, ZnSO4, SnCl4 and H2SeO3, and the substrate is a Mo coated soda-lime glass. The CZTSe thin films were obtained by annealing the electrochemically deposited films in the selenium vapors at the temperature of 550°C. The crystal phases, micro-structures, chemical compositions and optical properties of CZTSe films have been studied by powder X-ray diffraction (XRD), scanning electron microscopy (SEM), inductively coupled plasma optical emission spectrometer (ICP-OES), Raman scattering spectrum, and UV–vis absorption spectroscopic means. The results revealed that the electrolytes with Cu:Zn:Sn:Se molar ratio of 3:70:20:3 yields nearly pure phase of kesterite, and a band gap of 0.94eV was determined by spectroscopic measurements.
Author Xu, Jinzhang
Zou, Peng
Wan, Lei
Meng, Mingming
Miao, Shiding
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Keywords Thin films
Electrodeposition
Cu2ZnSnSe4
Solar energy materials
Cu
ZnSnSe
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Snippet ► Selenization one-step electrochemical deposition Cu–Zn–Sn–Se precursors to fabricate CZTSe thin films for the first time. ► Studied the effect of different...
In this research a non-vacuum strategy was reported in facile preparation of kesterite-type Cu2ZnSnSe4 (CZTSe) thin films via selenization of one-step...
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SubjectTerms Condensed matter: electronic structure, electrical, magnetic, and optical properties
Condensed matter: structure, mechanical and thermal properties
Copper
COPPER SULFATE
Cross-disciplinary physics: materials science; rheology
Cu2ZnSnSe4
DEPOSITION
ELECTRODEPOSITION
Electrolytes
Exact sciences and technology
MICA
Optical properties
Physics
Precursors
PROPERTIES
Solar energy materials
Spectroscopic analysis
Spectroscopy
THIN FILMS
Title Cu2ZnSnSe4 thin films prepared by selenization of one-step electrochemically deposited Cu–Zn–Sn–Se precursors
URI https://dx.doi.org/10.1016/j.apsusc.2013.02.088
https://www.proquest.com/docview/1770306433
Volume 273
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