A Benchmark of Germane and Digermane for the Low Temperature Growth of Intrinsic and Heavily in-situ Boron-Doped SiGe
We have benchmarked germane and digermane for the low temperature growth of SiGe and SiGe:B (with disilane as the Si gaseous precursor). At 500°C, 20 Torr, the SiGe growth rate increased linearly with the Ge flow. It was 8 to 10 times higher with Ge2H6 than with GeH4, however. Ge atoms were otherwis...
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Published in | ECS transactions Vol. 75; no. 8; pp. 281 - 293 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
The Electrochemical Society, Inc
18.08.2016
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Online Access | Get full text |
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