A Benchmark of Germane and Digermane for the Low Temperature Growth of Intrinsic and Heavily in-situ Boron-Doped SiGe

• Published in: ECS transactions Vol. 75; no. 8; pp. 281 - 293
• Main Authors: Hartmann, Jean-Michel, Aubin, Joris, Barnes, Jean-Paul
• Format: Journal Article
• Language: English
• Published: The Electrochemical Society, Inc 18.08.2016

We have benchmarked germane and digermane for the low temperature growth of SiGe and SiGe:B (with disilane as the Si gaseous precursor). At 500°C, 20 Torr, the SiGe growth rate increased linearly with the Ge flow. It was 8 to 10 times higher with Ge2H6 than with GeH4, however. Ge atoms were otherwis...