Controlled growth of MoS2 by atomic layer deposition on patterned gold pads

• Published in: Journal of crystal growth Vol. 541; p. 125683
• Main Authors: Yue, Chenxi, Wang, Yang, Liu, Hao, Chen, Lin, Zhu, Hao, Sun, Qingqing
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.07.2020; Elsevier BV
• Subjects: A3. Atomic layer deposition; Atomic layer epitaxy; B1. Sulfides; B2. Semiconducting materials; Chemical vapor deposition; Electrocatalysts; Film growth; Hydrogen evolution reactions; Molybdenum disulfide; Nanoelectronics; Optoelectronics; Sapphire; Silicon dioxide; Silicon substrates; Thin films; A3. Atomic layer deposition; B1. Sulfides; B2. Semiconducting materials

•ALD-based synthesis approach was developed for the deposition of MoS2.•Growth behaviors on various substrates were analyzed and compared.•Mechanism of MoS2 growth on Au by ALD was discussed.•Selective growth of MoS2 at controlled location was achieved using ALD. Approaches to synthesize large-area...