Efficiency improvement of PERC solar cell using an aluminum oxide passivation layer prepared via spatial atomic layer deposition and post-annealing

• Published in: Surface & coatings technology Vol. 358; pp. 968 - 975
• Main Authors: Hsu, Chia-Hsun, Huang, Chun-Wei, Cho, Yun-Shao, Wu, Wan-Yu, Wuu, Dong-Sing, Zhang, Xiao-Ying, Zhu, Wen-Zhang, Lien, Shui-Yang, Ye, Chang-Sin
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 25.01.2019; Elsevier BV
• Subjects: Aluminum oxide; Annealing; Atomic layer epitaxy; Atomic properties; Charge density; Dehydrogenation; Electric contacts; Emitters; Organic chemistry; Passivated emitter and rear contact solar cell; Passivation; Passivity; Photovoltaic cells; Post annealing; Silicon oxides; Solar cells; Spatial atomic layer deposition; Thin films; Post annealing; Spatial atomic layer deposition; Passivated emitter and rear contact solar cell; Aluminum oxide; Passivation

In this study, Al2O3 thin films are deposited on p-type silicon using spatial atomic layer deposition with trimethylaluminum and H2O. The films are annealed in atmosphere (ATM), forming gas (FG) and nitrogen (N2) at temperatures of 300–750 °C. Effects of annealing gas ambient and temperature on stru...