Semi-polar (11–22) AlN epitaxial films on m-plane sapphire substrates with greatly improved crystalline quality obtained by high-temperature annealing

• Published in: Journal of crystal growth Vol. 570; p. 126207
• Main Authors: Xing, Kun, Cheng, Xueying, Wang, Liancheng, Chen, Shirong, Zhang, Yun, Liang, Huaguo
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 15.09.2021; Elsevier BV
• Subjects: Annealing; Atomic force microscopy; Compressive properties; Crystal structure; Crystallinity; Epitaxial growth; Grain size; High temperature; High temperature annealing; Low cost; Low defect density; Metalorganic chemical vapor deposition; Microscopy; MOCVD; Optoelectronic devices; Organic chemicals; Organic chemistry; Raman spectroscopy; Recrystallization; Sapphire; Semi-polar AlN growth; Stacking faults; Substrates; Semi-polar AlN growth; MOCVD; Low defect density; High temperature annealing

•Semi-polar AlN film quality was massively improved by high-temperature annealing.•Neither a high-temperature MOCVD nor an ex situ sputtering process is required.•The proposed method provides better AlN quality than previously reported results.•The proposed method is suitable for mass-producing low-...