APA (7th ed.) Citation

Xing, K., Cheng, X., Wang, L., Chen, S., Zhang, Y., & Liang, H. (2021). Semi-polar (11–22) AlN epitaxial films on m-plane sapphire substrates with greatly improved crystalline quality obtained by high-temperature annealing. Journal of crystal growth, 570, 126207. https://doi.org/10.1016/j.jcrysgro.2021.126207

Chicago Style (17th ed.) Citation

Xing, Kun, Xueying Cheng, Liancheng Wang, Shirong Chen, Yun Zhang, and Huaguo Liang. "Semi-polar (11–22) AlN Epitaxial Films on M-plane Sapphire Substrates with Greatly Improved Crystalline Quality Obtained by High-temperature Annealing." Journal of Crystal Growth 570 (2021): 126207. https://doi.org/10.1016/j.jcrysgro.2021.126207.

MLA (9th ed.) Citation

Xing, Kun, et al. "Semi-polar (11–22) AlN Epitaxial Films on M-plane Sapphire Substrates with Greatly Improved Crystalline Quality Obtained by High-temperature Annealing." Journal of Crystal Growth, vol. 570, 2021, p. 126207, https://doi.org/10.1016/j.jcrysgro.2021.126207.