Molecular dynamics study of damage nearby silicon surface bombarded by energetic carbon ions

• Published in: Surface & coatings technology Vol. 385; p. 125350
• Main Authors: Liang, Guoying, Zhong, Haowen, Zhang, Shijian, Xu, Mofei, Kuang, Shicheng, Ren, Jianhui, Zhang, Nan, Yan, Sha, Yu, Xiao, Remnev, Gennady Efimovich, Le, Xiaoyun
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 15.03.2020; Elsevier BV
• Subjects: Carbon; Damage; Evolution; Interstitial atom; Ion bombardment; Irradiation; Molecular dynamics; Point defect; Point defects; Silicon; Vacancy; Molecular dynamics; Interstitial atom; Damage; Vacancy; Point defect

This paper investigates damage generation and evolution nearby silicon surface bombarded by energetic carbon ions by using molecular dynamics simulations. We experimentally measured elementary composition in defect regions based on energy dispersive spectrometer analysis. Using molecular dynamics si...