A Screen-Printed Sn-Based Substrate Technology for the Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes
A dicing-free substrate technology was proposed and demonstrated to simplify the fabrication of vertical-structured metal substrate GaN-based light-emitting diodes (VM-LEDs) using a Sn-based solder screen printing technique with patterned laser lift-off technology. As compared with conventional sapp...
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| Published in | Japanese Journal of Applied Physics Vol. 49; no. 4; pp. 04DG10 - 04DG10-3 |
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| Main Authors | , , , , , , , |
| Format | Journal Article |
| Language | English |
| Published |
The Japan Society of Applied Physics
01.04.2010
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| Online Access | Get full text |
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| Abstract | A dicing-free substrate technology was proposed and demonstrated to simplify the fabrication of vertical-structured metal substrate GaN-based light-emitting diodes (VM-LEDs) using a Sn-based solder screen printing technique with patterned laser lift-off technology. As compared with conventional sapphire substrate GaN-based LEDs, VM-LEDs with an effective emission area of $1000\times 1000$ \mbox{$\mu$m} 2 were found to have a 0.38 (0.87) V reduction in forward voltage at 350 (700) mA. In addition, their enhancement in light output power in the current range of 350--700 mA was found to successively increase from 55 to 76%. By considering these results, the power conversion efficiency of VM-LEDs was found to be 2.14 times that of regular LEDs at 700 mA. |
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| AbstractList | A dicing-free substrate technology was proposed and demonstrated to simplify the fabrication of vertical-structured metal substrate GaN-based light-emitting diodes (VM-LEDs) using a Sn-based solder screen printing technique with patterned laser lift-off technology. As compared with conventional sapphire substrate GaN-based LEDs, VM-LEDs with an effective emission area of $1000\times 1000$ \mbox{$\mu$m} 2 were found to have a 0.38 (0.87) V reduction in forward voltage at 350 (700) mA. In addition, their enhancement in light output power in the current range of 350--700 mA was found to successively increase from 55 to 76%. By considering these results, the power conversion efficiency of VM-LEDs was found to be 2.14 times that of regular LEDs at 700 mA. A dicing-free substrate technology was proposed and demonstrated to simplify the fabrication of vertical-structured metal substrate GaN-based light-emitting diodes (VM-LEDs) using a Sn-based solder screen printing technique with patterned laser lift-off technology. As compared with conventional sapphire substrate GaN-based LEDs, VM-LEDs with an effective emission area of 1000×1000 µm 2 were found to have a 0.38 (0.87) V reduction in forward voltage at 350 (700) mA. In addition, their enhancement in light output power in the current range of 350–700 mA was found to successively increase from 55 to 76%. By considering these results, the power conversion efficiency of VM-LEDs was found to be 2.14 times that of regular LEDs at 700 mA. |
| Author | Wang, Pei-Ren Chen, Tron-Min Wang, Po-Hung Wang, Shui-Jinn Uang, Kai-Ming Kuo, Hon-Yi Lee, Wei-Chi Kuo, Der-Ming |
| Author_xml | – sequence: 1 givenname: Pei-Ren surname: Wang fullname: Wang, Pei-Ren organization: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China – sequence: 2 givenname: Shui-Jinn surname: Wang fullname: Wang, Shui-Jinn organization: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China – sequence: 3 givenname: Hon-Yi surname: Kuo fullname: Kuo, Hon-Yi organization: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China – sequence: 4 givenname: Kai-Ming surname: Uang fullname: Uang, Kai-Ming organization: Department of Electrical Engineering, Wu Feng Institute of Technology, Chia-yi, Taiwan, Republic of China – sequence: 5 givenname: Tron-Min surname: Chen fullname: Chen, Tron-Min organization: Department of Electrical Engineering, Wu Feng Institute of Technology, Chia-yi, Taiwan, Republic of China – sequence: 6 givenname: Po-Hung surname: Wang fullname: Wang, Po-Hung organization: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China – sequence: 7 givenname: Wei-Chi surname: Lee fullname: Lee, Wei-Chi organization: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China – sequence: 8 givenname: Der-Ming surname: Kuo fullname: Kuo, Der-Ming organization: Institute of Microelectronics, Department of Electrical Engineering, National Cheng Kung University, Tainan 70101, Taiwan, Republic of China |
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| Notes | (Color online) Schematic diagram of the fabrication processes of VM-LEDs with screen-printed Sn-based substrate. (a) Screen printing of Sn-based paste, (b) mounting a temporal substrate and patterned LLO process, and (c) surface roughening up to n-GaN and metal pad formation. (d) Schematic cross section of a regular GaN-based LED. Note that the device structures shown in the present figure were not drawn to scale. (Color online) SEM/OM images of samples in key processing states. (a) Top-view image of the sample after screening printing of Sn-based paste. (b) Top-view image of the patterned Sn-based substrates after reflow process. (c) 3D profile of the sample on the Sn-based metal substrate side. (d) Top-view image of the exposed n-GaN. (Color online) Comparison of typical forward $I$--$V$ characteristics of VM-LEDs and regular LEDs. (Color online) Comparison of typical $L_{\text{op}}$--$I$ characteristics of VM-LEDs and regular LEDs. The inset shows the $m$--$I$ characteristic of VM-LEDs and regular LEDs ($L_{\text{op}} \propto I^{m}$). |
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| Title | A Screen-Printed Sn-Based Substrate Technology for the Fabrication of Vertical-Structured GaN-Based Light-Emitting Diodes |
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