Synthesis and characterization of boron antimonide films by pulsed laser deposition technique

• Published in: Applied surface science Vol. 353; pp. 439 - 448
• Main Authors: Das, S., Bhunia, R., Hussain, S., Bhar, R., Chakraborty, B.R., Pal, A.K.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 30.10.2015
• Subjects: Ablation; Antimonides; Antimony; Boron; Deposition; Laser processing; Luminescence; Photoelectron spectroscopy; Pulsed laser deposition; Semiconductors; X-ray photoelectron spectroscopy; Zinc; 78.66.Fd; 68.55.−a; Semiconductors; Luminescence; Laser processing; 81.15.Fg; Photoelectron spectroscopy
• ISSN: 0169-4332; 1873-5584
• DOI: 10.1016/j.apsusc.2015.06.157

•Pulsed laser ablation technique was successfully adopted to deposit polycrystalline boron antimonide films with assured stoichiometric composition.•The films were predominantly zinc blende structure with intense reflections from (111), (102) and (112) planes only.•SIMS studies indicated very uniform distribution of B and Sb in the whole bulk of the film.•XPS spectra indicated characteristic peaks at ∼34.87eV for Sb4d, ∼188.1eV for B1s, ∼529eV for overlapping Sb3d5/2: O1s, ∼765.5eV for Sb3p3/2, ∼539eV for Sb3d3/2 and ∼812.8eV for Sb3p1/2.•Raman spectra were dominated by a peak located at ∼151cm−1 followed by a peak at ∼64cm−1. The peak at ∼152cm−1 is closer to the Sb–LO mode. Two low-intensity Raman peaks located at ∼595cm−1 and 821cm−1 could also be observed in the Raman spectra. Boron antimonide films (BSb) were successfully deposited by pulsed laser deposition technique on glass, fused silica and silicon substrates by using a target prepared by admixing boron and antimony powders in appropriate proportions. Nd-YAG laser was used to ablate the target. Films deposited at substrate temperatures of 673K and above showed zinc blende structure. Grain growth in the films was observed in films deposited at higher temperatures. Films deposited on Si(100) substrates at higher deposition temperatures indicated lower residual strain. SIMS studies indicated very uniform distribution of B and Sb in the whole bulk of the films. XPS spectra indicated characteristic peaks at ∼34.87eV for Sb4d, ∼188.1eV for B1s, ∼765.5eV for Sb3p3/2, ∼539eV for Sb3d3/2 and ∼812.8eV for Sb3p1/2. Raman peaks for BSb were located at ∼64cm−1, 152cm−1, 595cm−1 and 821cm−1.