Fabrication quasi-two-dimensional conducting area and superconductivity at the ferroelectric/dielectric interfaces

• Published in: Ferroelectrics Vol. 567; no. 1; pp. 113 - 120
• Main Authors: Mamin, R.F., Piyanzina, I. I., Pavlov, D. P., Kabanov, V. V.
• Format: Journal Article
• Language: English
• Published: Philadelphia Taylor & Francis 25.10.2020; Taylor & Francis Ltd
• Subjects: Barium titanates; Crystals; Electrical resistance; Electrical resistivity; Electronic devices; Fabrication; ferroelectric films; Ferroelectric materials; Ferroelectricity; Heterostructures; Interfaces; Lanthanum compounds; Low temperature; Magnetic fields; quasi-two-dimensional electron gas; Single crystals; Superconductivity; Temperature; Temperature dependence; Transition temperature; Transition temperatures
• ISSN: 0015-0193; 1563-5112
• DOI: 10.1080/00150193.2020.1791594

We present the results of the investigations of high conducting area and superconductivity at the interfaces between ferroelectric oxide and insulating oxide in heterostructures, isostructural to BaTiO 3 /LaMnO 3 and BaTiO 3 /La 2 CuO 4 . The numerical simulations of these heterostructures have been performed. The temperature dependence of the measured electrical resistance of Ba 0.8 Sr 0.2 TiO 3 /LaMnO 3 (BSTO/LMO) is compared to that exhibited by LaMnO 3 (LMO) single crystals without the films. It is found that in the samples with the film, for which the axis of polarization in the ferroelectric is directed along the normal to the surface of the single crystal, the electrical resistance decreases significantly with temperature, exhibiting metallic behavior at low temperatures. The transition to the state with 2DEG at the interface is demonstrated. The effect of a magnetic field on heterostructure BSTO/LMO haves been investigated. It is shown that magnetic field changes strongly the resistivity of the interface BSTO/LMO. We study properties of the interface of the heterostructure Ba 0.8 Sr 0.2 TiO 3 /La 2 CuO 4 and found the superconducting behavior with transition temperature T c about 30 K. The proposed concept promises the ferroelectrically controlled interface conductivity and superconductivity. All this offers the possibility to design novel electronic devices.