Modulation of electronic structure properties of C/B/Al-doped armchair GaN nanoribbons

• Published in: Molecular physics Vol. 118; no. 7; p. e1656833
• Main Authors: Guo, Chengkun, Chen, Tong, Xu, Liang, Li, Quan, Xu, Zhonghui, Long, Mengqiu
• Format: Journal Article
• Language: English
• Published: Abingdon Taylor & Francis 02.04.2020; Taylor & Francis Ltd
• Subjects: Aluminum; armchair GaN nanoribbons; Density functional theory; Electronic structure; Energy gap; Gallium nitrides; Impurities; Nanoribbons; Semiconductors; The first principle method

The electronic structures of C/B/Al-doped armchair GaN nanoribbons (aGaNNRs) are systematically studied by using density functional theory. We find that the original aGaNNRs are direct band gap semiconductors and that the gaps monotonically decrease with increasing widths. Interestingly, the B- or A...