STM measurement of current–potential curves at a semiconductor surface

A new experimental method for the analysis of current–potential curves determined with a scanning tunneling microscope in an electrochemical cell is described. Spectroscopic measurements have been performed in sulfuric acid at a tungsten diselenide semiconductor sample. Measurements of current–volta...

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Published inElectrochimica acta Vol. 45; no. 20; pp. 3213 - 3223
Main Authors Hiesgen, R, Krause, M, Meissner, D
Format Journal Article
LanguageEnglish
Published Elsevier Ltd 01.06.2000
Subjects
Barrier
Photoelectrochemistry
Spectroscopy
STM
WSe 2
Photoelectrochemistry
Spectroscopy
WSe 2
Barrier
STM
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Abstract A new experimental method for the analysis of current–potential curves determined with a scanning tunneling microscope in an electrochemical cell is described. Spectroscopic measurements have been performed in sulfuric acid at a tungsten diselenide semiconductor sample. Measurements of current–voltage curves obtained with the STM for different tunneling gaps and for different potentials of the tip and the semiconductor are recorded, and results are shown. Current–distance curves obtained from these measurements allow the separation of the influence of the tunneling barrier from that of the Schottky barrier at the semiconductor/electrolyte interface. Changes in the barrier heights are due to an electronic influence from the tip potential on the semiconductor surface potential when the tip enters the electrochemical double layer.
AbstractList A new experimental method for the analysis of current–potential curves determined with a scanning tunneling microscope in an electrochemical cell is described. Spectroscopic measurements have been performed in sulfuric acid at a tungsten diselenide semiconductor sample. Measurements of current–voltage curves obtained with the STM for different tunneling gaps and for different potentials of the tip and the semiconductor are recorded, and results are shown. Current–distance curves obtained from these measurements allow the separation of the influence of the tunneling barrier from that of the Schottky barrier at the semiconductor/electrolyte interface. Changes in the barrier heights are due to an electronic influence from the tip potential on the semiconductor surface potential when the tip enters the electrochemical double layer.
Author Hiesgen, R
Krause, M
Meissner, D
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  surname: Meissner
  fullname: Meissner, D
  organization: Physikalische Chemie, Technische Universität Linz, Altenberger Strasse 69, A-4040 Linz, Austria
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10.1016/S0013-4686(97)00108-4
10.1103/PhysRevLett.27.922
10.1016/0038-1101(77)90206-4
10.1021/j100319a043
10.1007/s002160050344
10.1021/jp9816420
10.1007/978-94-015-1301-2
10.1039/pc095117
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References Hamann, Vielstich (BIB11) 1998
Young, Ward, Scire (BIB17) 1971; 27
Hiesgen, Meissner (BIB2) 1997; 358
Hiesgen, Meissner (BIB9) 1997; 42
Binning, Rohrer (BIB1) 1982; 55
Maier, Uhlendorf, Meissner (BIB7) 1995; 40
A. Uruchamy (Ed.), in: Photoelectrochemistry and Photovoltaics of Layered Semiconductors, Kluwer Academic, Dordrecht, 1992.
Nosaka, Norimatsu, Myama (BIB5) 1984; 106
Schmickler (BIB14) 1999; 95
Card (BIB18) 1977; 20
Bach, Nichols, Beckmann, Meyer, Schulte, O. Besenhard, Jannakoudakis (BIB10) 1993; 140
C. Sinn, PhD thesis, Hamburg, 1989.
Schmickler, Henderson (BIB15) 1990; 290
Nakato, Ueda, Yano, Tsubomura (BIB6) 1988; 92
Fan, Bard (BIB8) 1993; 97
Hiesgen, Meissner (BIB3) 1998; 10
Hiesgen, Meissner (BIB4) 1998; 102
W. Jaegermann, private communication.
Binning (10.1016/S0013-4686(00)00425-4_BIB1) 1982; 55
10.1016/S0013-4686(00)00425-4_BIB13
Hiesgen (10.1016/S0013-4686(00)00425-4_BIB2) 1997; 358
10.1016/S0013-4686(00)00425-4_BIB12
Maier (10.1016/S0013-4686(00)00425-4_BIB7) 1995; 40
Hiesgen (10.1016/S0013-4686(00)00425-4_BIB9) 1997; 42
Schmickler (10.1016/S0013-4686(00)00425-4_BIB14) 1999; 95
10.1016/S0013-4686(00)00425-4_BIB16
Hiesgen (10.1016/S0013-4686(00)00425-4_BIB4) 1998; 102
Nakato (10.1016/S0013-4686(00)00425-4_BIB6) 1988; 92
Bach (10.1016/S0013-4686(00)00425-4_BIB10) 1993; 140
Fan (10.1016/S0013-4686(00)00425-4_BIB8) 1993; 97
Schmickler (10.1016/S0013-4686(00)00425-4_BIB15) 1990; 290
Nosaka (10.1016/S0013-4686(00)00425-4_BIB5) 1984; 106
Hiesgen (10.1016/S0013-4686(00)00425-4_BIB3) 1998; 10
Young (10.1016/S0013-4686(00)00425-4_BIB17) 1971; 27
Card (10.1016/S0013-4686(00)00425-4_BIB18) 1977; 20
Hamann (10.1016/S0013-4686(00)00425-4_BIB11) 1998
References_xml – volume: 92
  start-page: 2316
  year: 1988
  ident: BIB6
  publication-title: J. Phys. Chem.
  contributor:
    fullname: Tsubomura
– volume: 20
  start-page: 971
  year: 1977
  ident: BIB18
  publication-title: Solid-State Electron.
  contributor:
    fullname: Card
– volume: 358
  start-page: 54
  year: 1997
  ident: BIB2
  publication-title: Fres. J. Anal. Chem.
  contributor:
    fullname: Meissner
– volume: 42
  start-page: 2881
  year: 1997
  ident: BIB9
  publication-title: Electrochim. Acta
  contributor:
    fullname: Meissner
– volume: 95
  start-page: 117
  year: 1999
  ident: BIB14
  article-title: Recent progress in theoretical electrochemistry
  publication-title: Ann. Rep. Sect. C
  contributor:
    fullname: Schmickler
– volume: 290
  start-page: 283
  year: 1990
  ident: BIB15
  publication-title: J. Electroanal. Chem.
  contributor:
    fullname: Henderson
– volume: 10
  start-page: 619
  year: 1998
  ident: BIB3
  publication-title: Adv. Mater.
  contributor:
    fullname: Meissner
– year: 1998
  ident: BIB11
  publication-title: Elektrochemie
  contributor:
    fullname: Vielstich
– volume: 27
  start-page: 922
  year: 1971
  ident: BIB17
  publication-title: Phys. Rev. Lett.
  contributor:
    fullname: Scire
– volume: 140
  start-page: 1281
  year: 1993
  ident: BIB10
  publication-title: J. Electrochem. Soc.
  contributor:
    fullname: Jannakoudakis
– volume: 102
  start-page: 6549
  year: 1998
  ident: BIB4
  publication-title: J. Phys. Chem.
  contributor:
    fullname: Meissner
– volume: 55
  start-page: 726
  year: 1982
  ident: BIB1
  publication-title: Helv. Phys. Acta
  contributor:
    fullname: Rohrer
– volume: 97
  start-page: 1431
  year: 1993
  ident: BIB8
  publication-title: J. Phys. Chem.
  contributor:
    fullname: Bard
– volume: 106
  start-page: 128
  year: 1984
  ident: BIB5
  publication-title: Chem. Phys. Lett.
  contributor:
    fullname: Myama
– volume: 40
  start-page: 1523
  year: 1995
  ident: BIB7
  publication-title: Electrochim. Acta
  contributor:
    fullname: Meissner
– volume: 140
  start-page: 1281
  year: 1993
  ident: 10.1016/S0013-4686(00)00425-4_BIB10
  publication-title: J. Electrochem. Soc.
  doi: 10.1149/1.2220971
  contributor:
    fullname: Bach
– ident: 10.1016/S0013-4686(00)00425-4_BIB16
– volume: 106
  start-page: 128
  year: 1984
  ident: 10.1016/S0013-4686(00)00425-4_BIB5
  publication-title: Chem. Phys. Lett.
  doi: 10.1016/0009-2614(84)87025-6
  contributor:
    fullname: Nosaka
– volume: 55
  start-page: 726
  year: 1982
  ident: 10.1016/S0013-4686(00)00425-4_BIB1
  publication-title: Helv. Phys. Acta
  contributor:
    fullname: Binning
– ident: 10.1016/S0013-4686(00)00425-4_BIB12
– volume: 290
  start-page: 283
  year: 1990
  ident: 10.1016/S0013-4686(00)00425-4_BIB15
  publication-title: J. Electroanal. Chem.
  doi: 10.1016/0022-0728(90)87439-Q
  contributor:
    fullname: Schmickler
– volume: 40
  start-page: 1523
  issue: 10
  year: 1995
  ident: 10.1016/S0013-4686(00)00425-4_BIB7
  publication-title: Electrochim. Acta
  doi: 10.1016/0013-4686(95)00033-B
  contributor:
    fullname: Maier
– volume: 97
  start-page: 1431
  year: 1993
  ident: 10.1016/S0013-4686(00)00425-4_BIB8
  publication-title: J. Phys. Chem.
  doi: 10.1021/j100109a030
  contributor:
    fullname: Fan
– volume: 10
  start-page: 619
  year: 1998
  ident: 10.1016/S0013-4686(00)00425-4_BIB3
  publication-title: Adv. Mater.
  doi: 10.1002/(SICI)1521-4095(199805)10:8<619::AID-ADMA619>3.0.CO;2-D
  contributor:
    fullname: Hiesgen
– volume: 42
  start-page: 2881
  year: 1997
  ident: 10.1016/S0013-4686(00)00425-4_BIB9
  publication-title: Electrochim. Acta
  doi: 10.1016/S0013-4686(97)00108-4
  contributor:
    fullname: Hiesgen
– year: 1998
  ident: 10.1016/S0013-4686(00)00425-4_BIB11
  contributor:
    fullname: Hamann
– volume: 27
  start-page: 922
  year: 1971
  ident: 10.1016/S0013-4686(00)00425-4_BIB17
  publication-title: Phys. Rev. Lett.
  doi: 10.1103/PhysRevLett.27.922
  contributor:
    fullname: Young
– volume: 20
  start-page: 971
  year: 1977
  ident: 10.1016/S0013-4686(00)00425-4_BIB18
  publication-title: Solid-State Electron.
  doi: 10.1016/0038-1101(77)90206-4
  contributor:
    fullname: Card
– volume: 92
  start-page: 2316
  year: 1988
  ident: 10.1016/S0013-4686(00)00425-4_BIB6
  publication-title: J. Phys. Chem.
  doi: 10.1021/j100319a043
  contributor:
    fullname: Nakato
– volume: 358
  start-page: 54
  year: 1997
  ident: 10.1016/S0013-4686(00)00425-4_BIB2
  publication-title: Fres. J. Anal. Chem.
  doi: 10.1007/s002160050344
  contributor:
    fullname: Hiesgen
– volume: 102
  start-page: 6549
  year: 1998
  ident: 10.1016/S0013-4686(00)00425-4_BIB4
  publication-title: J. Phys. Chem.
  doi: 10.1021/jp9816420
  contributor:
    fullname: Hiesgen
– ident: 10.1016/S0013-4686(00)00425-4_BIB13
  doi: 10.1007/978-94-015-1301-2
– volume: 95
  start-page: 117
  year: 1999
  ident: 10.1016/S0013-4686(00)00425-4_BIB14
  article-title: Recent progress in theoretical electrochemistry
  publication-title: Ann. Rep. Sect. C
  doi: 10.1039/pc095117
  contributor:
    fullname: Schmickler
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Snippet A new experimental method for the analysis of current–potential curves determined with a scanning tunneling microscope in an electrochemical cell is described....
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Photoelectrochemistry
Spectroscopy
STM
WSe 2
Title STM measurement of current–potential curves at a semiconductor surface
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