Growth mechanism of α-SiC hetero-epitaxial films by PLD as studied on the laser photon, pulse-width and substrates dependence - Muto, Hachizo; Kamiya, Shin-ichiro; Kusumori, Takeshi (Optical materials, 2003)
Keywords: Cross-disciplinary physics: materials science; rheology; Epitaxy; Exact sciences and technology; Heteroepitaxy; Laser deposition; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; Physics; Picosecond laser; Pulsed laser ablation; Silicon carbide (or SiC); Thin film; Pulsed laser ablation; Epitaxy; Heteroepitaxy; Picosecond laser; 81.15.Fg; Silicon carbide (or SiC); Thin film; Inorganic compounds; Epitaxial layers; Silicon carbides; Pulsed laser deposition; XRD; RHEED; Infrared spectra; Experimental study; Substrates; Deposition process; Characterization; Monocrystals; Growth mechanism