Comparative spectroscopic studies of MOCVD grown AlN films on Al2O3 and 6H–SiC

• Published in: Journal of alloys and compounds Vol. 857; p. 157487
• Main Authors: Yin, Junhua, Chen, Daihua, Yang, Hong, Liu, Yao, Talwar, Devki N., He, Tianlong, Ferguson, Ian T., He, Kaiyan, Wan, Lingyu, Feng, Zhe Chuan
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 15.03.2021; Elsevier BV
• Subjects: 6H–SiC; Aluminum nitride; Aluminum oxide; Atomic force microscopy; Axial stress; Compressive properties; Dislocation density; Grain size; Metalorganic chemical vapor deposition; Optical properties; Organic chemicals; Organic chemistry; Photoelectrons; Photoluminescence; Photoluminescence (PL); Raman spectra; Sapphire; Silicon substrates; Spectroellipsometry; Spectroscopic analysis; Surface roughness; Temperature dependence; Temperature-dependent Raman; Tensile stress; Thin films; X ray photoelectron spectroscopy; X-ray photoelectron spectroscopy (XPS); Temperature-dependent Raman; Photoluminescence (PL); Sapphire; X-ray photoelectron spectroscopy (XPS); 6H–SiC; Aluminum nitride

A comprehensive spectroscopic study is reported for MOCVD (Metal organic chemical vapor deposition) grown AlN thin films prepared on sapphire (Al2O3) and 6H–SiC substrates. Impacts of substrate on the structural, surface and optical properties of AlN epilayers are meticulously appraised by using hig...