The high-thermal stability and ultrafast phase change memory based on Ge1.6Te-GaSb nano-composite alloys

• Published in: Journal of alloys and compounds Vol. 727; pp. 1288 - 1292
• Main Authors: Xue, Yuan, Song, Sannian, Yan, Shuai, Guo, Tianqi, Shen, Lanlan, Wu, Liangcai, Song, Zhitang, Feng, Songlin
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 15.12.2017; Elsevier BV
• Subjects: Alloys; Computer memory; Crystallization; Doping; Endurance; Fast switching speed; GaSb; GeTe; High stability; Nanocomposites; Phase change materials; Switching; Thermal stability; Thermodynamic properties; GaSb; Fast switching speed; High stability; GeTe; Doping
• DOI: 10.1016/j.jallcom.2017.08.218
• ISSN: 0925-8388

Solving the contradictory between data retention and switching speed has been the subject of numerous investigations on phase change materials. Towards this end, Ge1.6Te-GaSb nano-composite is proposed, which combines advantages of fast crystallization speed and high thermal stability. The characterization results elucidate that doped materials exhibit a high crystallization temperature due to the enhanced stability of the amorphous state associated with the generated larger energy barrier. Furthermore, the reversible electrical switching capability of the phase-change devices is improved in terms of an ultrafast speed of 5 ns with Sb-rich GaSb addition. A good endurance of 20 K and long data retention are achieved simultaneously, indicating that Sb-rich GaSb incorporation into Ge1.6Te alloy is a promising material for high-temperature performance applications. •Ge1.6Te-GaSb nano-composite combines advantages of fast crystallization speed and high thermal stability.•The temperature for 10-year data retention of Ge2.7Te1.7GaSb4.6 is up to 218 °C.•Ge2.7Te1.7GaSb4.6 shows 5ns operation speed.•The grain size of Ge2.7Te1.7GaSb4.6 is smaller than that of GeTe.