Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating
We have fabricated by SNEP process Nb/Al/NbN/AlN/NbN Josephson junctions with the gap voltage V/sub g/=2/spl Delta//e/spl ap/4.0 mV, subgap leakage R/sub sg//R/sub n//spl ap/6.0, current density measured at the gap current rise J/sub g//spl ap/1.5 kA/cm/sup 2/. The (111)-textured NbN with transition...
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Published in | IEEE transactions on applied superconductivity Vol. 7; no. 2; pp. 2805 - 2808 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
IEEE
01.06.1997
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Abstract | We have fabricated by SNEP process Nb/Al/NbN/AlN/NbN Josephson junctions with the gap voltage V/sub g/=2/spl Delta//e/spl ap/4.0 mV, subgap leakage R/sub sg//R/sub n//spl ap/6.0, current density measured at the gap current rise J/sub g//spl ap/1.5 kA/cm/sup 2/. The (111)-textured NbN with transition temperature T/sub c//spl ap/16 K have been deposited at ambient substrate temperature. Phase composition and structure of the NbN films were investigated by X-ray diffraction analysis (XRD). It was found that the films have a structure close to the cubic /spl delta/-NbN (JCPDS card N38-11556) and the phase composition and intrinsic stress in NbN depend on Ar and N/sub 2/ partial pressure during DC magnetron sputtering. Cross-sectional TEM analysis showed that in-situ deposition of thin Al layer in the base Nb/Al/NbN electrode provides effective planarization of its surface and the result in improvement of tunnel junction parameters. |
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AbstractList | We have fabricated by SNEP process Nb/Al/NbN/AlN/NbN Josephson junctions with the gap voltage V(g)=2Delta/e{approximately equal to}4.0 mV, subgap leakage R(sg)/R(n){approximately equal to}6.0, current density measured at the gap current rise J(g){approximately equal to}1.5 kA/cm(2). The (111)-textured NbN with transition temperature T(c){approximately equal to}16 K have been deposited at ambient substrate temperature. Phase composition and structure of the NbN films were investigated by X-ray diffraction analysis (XRD). It was found that the films have a structure close to the cubic delta-NbN (JCPDS card N38-11556) and the phase composition and intrinsic stress in NbN depend on Ar and N(2) partial pressure during DC magnetron sputtering. Cross-sectional TEM analysis showed that in-situ deposition of thin Al layer in the base Nb/Al/NbN electrode provides effective planarization of its surface and the result in improvement of tunnel junction parameters We have fabricated by SNEP process Nb/Al/NbN/AlN/NbN Josephson junctions with the gap voltage V/sub g/=2/spl Delta//e/spl ap/4.0 mV, subgap leakage R/sub sg//R/sub n//spl ap/6.0, current density measured at the gap current rise J/sub g//spl ap/1.5 kA/cm/sup 2/. The (111)-textured NbN with transition temperature T/sub c//spl ap/16 K have been deposited at ambient substrate temperature. Phase composition and structure of the NbN films were investigated by X-ray diffraction analysis (XRD). It was found that the films have a structure close to the cubic /spl delta/-NbN (JCPDS card N38-11556) and the phase composition and intrinsic stress in NbN depend on Ar and N/sub 2/ partial pressure during DC magnetron sputtering. Cross-sectional TEM analysis showed that in-situ deposition of thin Al layer in the base Nb/Al/NbN electrode provides effective planarization of its surface and the result in improvement of tunnel junction parameters. |
Author | Kupriyanov, M.Yu Polyakov, S.N. Roddatis, V.V. Iosad, N.N. Balashov, D.V. |
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Cites_doi | 10.1109/TMAG.1987.1064829 10.1109/77.139224 10.1063/1.112516 10.1109/77.233936 10.1063/1.341113 10.1109/20.133889 10.1063/1.111730 10.1109/TMAG.1985.1063616 10.1109/20.133885 10.1063/1.331881 10.1109/TMAG.1987.1065100 |
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References | ref12 thyssen (ref13) 0 ref14 karpov (ref1) 1995 ref11 ref10 golubov (ref16) 1993; 76 ermakov (ref15) 1989 salez (ref2) 1995 ref8 ref7 ref9 ref4 ref3 ref6 ref5 |
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Snippet | We have fabricated by SNEP process Nb/Al/NbN/AlN/NbN Josephson junctions with the gap voltage V/sub g/=2/spl Delta//e/spl ap/4.0 mV, subgap leakage R/sub... We have fabricated by SNEP process Nb/Al/NbN/AlN/NbN Josephson junctions with the gap voltage V(g)=2Delta/e{approximately equal to}4.0 mV, subgap leakage... |
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SubjectTerms | Current density Current measurement Density measurement Josephson junctions Magnetic analysis Niobium Temperature Voltage X-ray diffraction X-ray scattering |
Title | Characterization of NbN/AlN/NbN tunnel junctions fabricated without intentional heating |
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