TEM investigation of defect structure in GaAlN/GaN heterostructures

• Published in: Vacuum Vol. 71; no. 1; pp. 159 - 163
• Main Authors: Makkai, Zs, Pécz, B., di Forte-Poisson, M.A.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Oxford Elsevier Ltd 09.05.2003; Elsevier
• Subjects: Chemical vapor deposition (including plasma-enhanced cvd, mocvd, etc.); Condensed matter: structure, mechanical and thermal properties; Crack; Cross-disciplinary physics: materials science; rheology; Defects and impurities: doping, implantation, distribution, concentration, etc; Exact sciences and technology; GaN; Inversion domain; Inverted hexagonal pit; Materials science; Methods of deposition of films and coatings; film growth and epitaxy; MOCVD; Physics; Sapphire; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Inverted hexagonal pit; GaN; Sapphire; Inversion domain; MOCVD; Crack; Inorganic compounds; Misfit dislocations; Gallium nitrides; Crystal defect density; Cracking; Experimental study; Growth defect; Crystal perfection; Structure composition relationship; Thin films; Microelectronic fabrication; Aluminium nitrides; Heterojunctions; Fabrication structure relation; Defect formation; III-V semiconductors

GaAlN/GaN layers are promising candidates as base materials for novel microelectronic devices. The electronic properties of these devices are strongly influenced by the density of threading dislocations, inversion domains and the inverted hexagonal pits on the surface. The effect of the Al concentra...