Exploring the structural stability and electrochemical performance of B doped T-graphene nanotubes from first-principles calculations

The structural stability and electrochemical performance of intrinsic and B doped T-graphene nanotubes with different tube lengths are systematically studied by using first-principles calculations within the framework of density functional theory (DFT). The results show that with the increase of tub...

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Published inPhysical chemistry chemical physics : PCCP Vol. 26; no. 1; pp. 455 - 462
Main Authors Zhang, Ruyan, Hou, Yuhua, Guo, Xialei, Li, Xinyu, Li, Wei, Tao, Xiaoma, Huang, Youlin
Format Journal Article
LanguageEnglish
Published England Royal Society of Chemistry 21.12.2023
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Summary:The structural stability and electrochemical performance of intrinsic and B doped T-graphene nanotubes with different tube lengths are systematically studied by using first-principles calculations within the framework of density functional theory (DFT). The results show that with the increase of tube length, the adsorption energy of both intrinsic and B doped T-graphene nanotubes exhibits regular oscillations, and B doping is beneficial for elevating the adsorption ability of T-graphene nanotubes. The density of states show that intrinsic T-graphene nanotubes are zero band gap semiconductors, and the orbitals' electronic states cross the Fermi level to form a p-type semiconductor, indicating that B doping greatly improves the conductivity of the system. The results of migration behavior demonstrate that B doping can effectively reduce the diffusion barrier of lithium ions on their surface, especially in B doped T-graphene nanotubes with a tube length of N = 1, resulting in more effective migration behavior and excellent rate performance. These findings provide a theoretical basis for the development and application of negative electrode materials for lithium-ion batteries. DFT calculations show that the intrinsic and B doped T-graphene nanotubes exhibit different properties for different tube lengths.
Bibliography:Electronic supplementary information (ESI) available. See DOI
https://doi.org/10.1039/d3cp04143c
ObjectType-Article-1
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ISSN:1463-9076
1463-9084
DOI:10.1039/d3cp04143c