Enhanced external quantum efficiencies of AlGaN-based deep-UV LEDs using reflective passivation layer
In this study, deep ultraviolet light-emitting diodes (DUV-LEDs) with a reflective passivation layer (RPL) were investigated. The RPL consists of HfO 2 /SiO 2 stacks as distributed Bragg reflectors, which are deposited on two DUV-LEDs with different p -GaN thicknesses. The RPL structure improved the...
Saved in:
Published in | Optics express Vol. 29; no. 23; pp. 37835 - 37844 |
---|---|
Main Authors | , , , , , , , , , , |
Format | Journal Article |
Language | English |
Published |
08.11.2021
|
Online Access | Get full text |
Cover
Loading…
Be the first to leave a comment!