Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications
•Amorphous LZO thin films were prepared via a sol-gel spin-coating method.•The RS performance improvement was from the formation of AlOx interface revealed via TEM images.•The AlOx interface not only can absorb more oxygen atoms from the LZO layer but suppress the out-diffusion of oxygen ions. Amorp...
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| Published in | Journal of alloys and compounds Vol. 899; p. 163294 |
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| Main Authors | , , , , |
| Format | Journal Article |
| Language | English |
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Lausanne
Elsevier B.V
05.04.2022
Elsevier BV |
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| Abstract | •Amorphous LZO thin films were prepared via a sol-gel spin-coating method.•The RS performance improvement was from the formation of AlOx interface revealed via TEM images.•The AlOx interface not only can absorb more oxygen atoms from the LZO layer but suppress the out-diffusion of oxygen ions.
Amorphous La2Zr2O7 thin films were fabricated using the sol-gel method and the bipolar resistive switching behavior of the metal(Al or Ti)/LZO/ITO devices were systematically investigated. The effect of film thickness, top electrodes, and post-annealing treatment conditions on the RS characteristics of the La2Zr2O7 thin films were also discussed. The film thickness increases significantly as the number of spin-coating layers increases, leading to a higher operation voltage and fewer switching cycle times. In addition, the RS properties of the devices are affected by the work function difference between the top and the bottom electrodes. All devices exhibited similar conduction mechanisms, which are described by the ohmic conduction in the low resistance state and space-charge limited current in the high resistance state. Moreover, the RS performance can be profoundly improved by the post-annealing treatment because of the formation of a thicker AlOx interface layer between the Al and LZO thin films, which was revealed via TEM images. The optimized RRAM performances are 1971 cycle times and high stable retention time for over 105 with a Ron/Roff ratio of around 101 at a post-annealing temperature of 300°C. The multilevel RS performances are also observed. Besides, this device maintained a large enough memory window in the retention test at 85°C thermal stress. The longer life is to be expected. |
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| AbstractList | •Amorphous LZO thin films were prepared via a sol-gel spin-coating method.•The RS performance improvement was from the formation of AlOx interface revealed via TEM images.•The AlOx interface not only can absorb more oxygen atoms from the LZO layer but suppress the out-diffusion of oxygen ions.
Amorphous La2Zr2O7 thin films were fabricated using the sol-gel method and the bipolar resistive switching behavior of the metal(Al or Ti)/LZO/ITO devices were systematically investigated. The effect of film thickness, top electrodes, and post-annealing treatment conditions on the RS characteristics of the La2Zr2O7 thin films were also discussed. The film thickness increases significantly as the number of spin-coating layers increases, leading to a higher operation voltage and fewer switching cycle times. In addition, the RS properties of the devices are affected by the work function difference between the top and the bottom electrodes. All devices exhibited similar conduction mechanisms, which are described by the ohmic conduction in the low resistance state and space-charge limited current in the high resistance state. Moreover, the RS performance can be profoundly improved by the post-annealing treatment because of the formation of a thicker AlOx interface layer between the Al and LZO thin films, which was revealed via TEM images. The optimized RRAM performances are 1971 cycle times and high stable retention time for over 105 with a Ron/Roff ratio of around 101 at a post-annealing temperature of 300°C. The multilevel RS performances are also observed. Besides, this device maintained a large enough memory window in the retention test at 85°C thermal stress. The longer life is to be expected. Amorphous La2Zr2O7 thin films were fabricated using the sol-gel method and the bipolar resistive switching behavior of the metal(Al or Ti)/LZO/ITO devices were systematically investigated. The effect of film thickness, top electrodes, and post-annealing treatment conditions on the RS characteristics of the La2Zr2O7 thin films were also discussed. The film thickness increases significantly as the number of spin-coating layers increases, leading to a higher operation voltage and fewer switching cycle times. In addition, the RS properties of the devices are affected by the work function difference between the top and the bottom electrodes. All devices exhibited similar conduction mechanisms, which are described by the ohmic conduction in the low resistance state and space-charge limited current in the high resistance state. Moreover, the RS performance can be profoundly improved by the post-annealing treatment because of the formation of a thicker AlOx interface layer between the Al and LZO thin films, which was revealed via TEM images. The optimized RRAM performances are 1971 cycle times and high stable retention time for over 105 with a Ron/Roff ratio of around 101 at a post-annealing temperature of 300°C. The multilevel RS performances are also observed. Besides, this device maintained a large enough memory window in the retention test at 85°C thermal stress. The longer life is to be expected. |
| ArticleNumber | 163294 |
| Author | Huang, Chi-Yuen Tseng, Hsiao-Ting Huang, Cheng-Liang Hsu, Tsung-Hsien Tsai, Meng-Hung |
| Author_xml | – sequence: 1 givenname: Hsiao-Ting surname: Tseng fullname: Tseng, Hsiao-Ting organization: Department of Electrical Engineering, National Cheng Kung University, Tainan City, Taiwan – sequence: 2 givenname: Tsung-Hsien surname: Hsu fullname: Hsu, Tsung-Hsien organization: Department of Electrical Engineering, National Cheng Kung University, Tainan City, Taiwan – sequence: 3 givenname: Meng-Hung surname: Tsai fullname: Tsai, Meng-Hung organization: Department of Electrical Engineering, National Cheng Kung University, Tainan City, Taiwan – sequence: 4 givenname: Chi-Yuen surname: Huang fullname: Huang, Chi-Yuen organization: Department of Resources Engineering, National Cheng Kung University, Tainan City, Taiwan – sequence: 5 givenname: Cheng-Liang surname: Huang fullname: Huang, Cheng-Liang email: huangcl@mail.ncku.edu.tw organization: Department of Electrical Engineering, National Cheng Kung University, Tainan City, Taiwan |
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| Snippet | •Amorphous LZO thin films were prepared via a sol-gel spin-coating method.•The RS performance improvement was from the formation of AlOx interface revealed via... Amorphous La2Zr2O7 thin films were fabricated using the sol-gel method and the bipolar resistive switching behavior of the metal(Al or Ti)/LZO/ITO devices were... |
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| SubjectTerms | Aluminum Amorphous Annealing Cycle time Film thickness High resistance La2Zr2O7 Low resistance RRAM Sol-gel Sol-gel processes Spin coating Switching Thermal stress Thin films Titanium Work functions |
| Title | Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications |
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