APA (7th ed.) Citation

Tseng, H., Hsu, T., Tsai, M., Huang, C., & Huang, C. (2022). Resistive switching characteristics of sol-gel derived La2Zr2O7 thin film for RRAM applications. Journal of alloys and compounds, 899, 163294. https://doi.org/10.1016/j.jallcom.2021.163294

Chicago Style (17th ed.) Citation

Tseng, Hsiao-Ting, Tsung-Hsien Hsu, Meng-Hung Tsai, Chi-Yuen Huang, and Cheng-Liang Huang. "Resistive Switching Characteristics of Sol-gel Derived La2Zr2O7 Thin Film for RRAM Applications." Journal of Alloys and Compounds 899 (2022): 163294. https://doi.org/10.1016/j.jallcom.2021.163294.

MLA (9th ed.) Citation

Tseng, Hsiao-Ting, et al. "Resistive Switching Characteristics of Sol-gel Derived La2Zr2O7 Thin Film for RRAM Applications." Journal of Alloys and Compounds, vol. 899, 2022, p. 163294, https://doi.org/10.1016/j.jallcom.2021.163294.