Resistive switching characteristics and mechanism of lanthanum yttrium oxide (LaYO3) films deposited by RF sputtering for RRAM applications

• Published in: Journal of alloys and compounds Vol. 930; p. 167487
• Main Authors: Cheng, Chiou-Ru, Tsai, Meng-Hung, Hsu, Tsung-Hsien, Li, Ming-Jen, Huang, Cheng-Liang
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 05.01.2023; Elsevier BV
• Subjects: Annealing; Deposition; Electrode materials; Electrodes; Filaments; Indium tin oxides; Lanthanum; LaYO3; Post-metal anneal; RRAM; Schottky emission; Sputtering; Substrates; Switching; Thin films; Yttrium oxide; RRAM; Post-metal anneal; LaYO3; Schottky emission

LaYO3 thin films are deposited by using RF sputtering and resistive switching properties of LaYO3-based RRAM devices are investigated. Specifically, the effects of sputtering time, top electrode materials, deposition conditions, annealing temperature, and annealing processes on resistive switching c...