APA (7th ed.) Citation

Cheng, C., Tsai, M., Hsu, T., Li, M., & Huang, C. (2023). Resistive switching characteristics and mechanism of lanthanum yttrium oxide (LaYO3) films deposited by RF sputtering for RRAM applications. Journal of alloys and compounds, 930, 167487. https://doi.org/10.1016/j.jallcom.2022.167487

Chicago Style (17th ed.) Citation

Cheng, Chiou-Ru, Meng-Hung Tsai, Tsung-Hsien Hsu, Ming-Jen Li, and Cheng-Liang Huang. "Resistive Switching Characteristics and Mechanism of Lanthanum Yttrium Oxide (LaYO3) Films Deposited by RF Sputtering for RRAM Applications." Journal of Alloys and Compounds 930 (2023): 167487. https://doi.org/10.1016/j.jallcom.2022.167487.

MLA (9th ed.) Citation

Cheng, Chiou-Ru, et al. "Resistive Switching Characteristics and Mechanism of Lanthanum Yttrium Oxide (LaYO3) Films Deposited by RF Sputtering for RRAM Applications." Journal of Alloys and Compounds, vol. 930, 2023, p. 167487, https://doi.org/10.1016/j.jallcom.2022.167487.