Least-Squares Phase Predistortion of a +30 dBm Class-D Outphasing RF PA in 65 nm CMOS

This paper presents a model-based phase-only predistortion method suitable for outphasing radio frequency (RF) power amplifiers (PA). The predistortion method is based on a model of the amplifier with a constant gain factor and phase rotation for each outphasing signal, and a predistorter with phase...

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Published inIEEE transactions on circuits and systems. I, Regular papers Vol. 60; no. 7; pp. 1915 - 1928
Main Authors Jung, Ylva, Fritzin, J., Enqvist, M., Alvandpour, A.
Format Journal Article
LanguageEnglish
Published New York IEEE 01.07.2013
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
Subjects
Amplifier
CMOS integrated circuits
complementary metal-oxide-semiconductor (CMOS)
Gain
linearization
Multiaccess communication
Optimization
outphasing
Phase distortion
Predistortion
Radio frequency
Studies
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Abstract This paper presents a model-based phase-only predistortion method suitable for outphasing radio frequency (RF) power amplifiers (PA). The predistortion method is based on a model of the amplifier with a constant gain factor and phase rotation for each outphasing signal, and a predistorter with phase rotation only. Exploring the structure of the outphasing PA, the model estimation problem can be reformulated from a nonconvex problem into a convex least-squares problem, and the predistorter can be calculated analytically. The method has been evaluated for 5 MHz Wideband Code-Division Multiple Access (WCDMA) and Long Term Evolution (LTE) uplink signals with Peak-to-Average Power Ratio (PAPR) of 3.5 dB and 6.2 dB, respectively, applied to one of the first fully integrated +30 dBm Class-D outphasing RF PAs in 65 nm CMOS. At 1.95 GHz for a 5.5 V (6.0 V) supply voltage, the measured output power of the PA was +29.7 dBm (+30.5 dBm) with a power-added efficiency (PAE) of 27%. For the WCDMA signal with +26.0 dBm of channel power, the measured Adjacent Channel Leakage Ratio (ACLR) at 5 MHz and 10 MHz offsets were - 46.3 dBc and - 55.6 dBc with predistortion, compared to -35.5 dBc and -48.1 dBc without predistortion. For the LTE signal with +23.3 dBm of channel power, the measured ACLR at 5 MHz offset was - 43.5 dBc with predistortion, compared to -34.1 dBc without predistortion.
AbstractList This paper presents a model-based phase-only predistortion method suitable for outphasing radio frequency (RF) power amplifiers (PA). The predistortion method is based on a model of the amplifier with a constant gain factor and phase rotation for each outphasing signal, and a predistorter with phase rotation only. Exploring the structure of the outphasing PA, the model estimation problem can be reformulated from a nonconvex problem into a convex least-squares problem, and the predistorter can be calculated analytically. The method has been evaluated for 5 MHz Wideband Code-Division Multiple Access (WCDMA) and Long Term Evolution (LTE) uplink signals with Peak-to-Average Power Ratio (PAPR) of 3.5 dB and 6.2 dB, respectively, applied to one of the first fully integrated +30 dBm Class-D outphasing RF PAs in 65 nm CMOS. At 1.95 GHz for a 5.5 V (6.0 V) supply voltage, the measured output power of the PA was +29.7 dBm (+30.5 dBm) with a power-added efficiency (PAE) of 27%. For the WCDMA signal with +26.0 dBm of channel power, the measured Adjacent Channel Leakage Ratio (ACLR) at 5 MHz and 10 MHz offsets were [Formula Omitted]46.3 dBc and [Formula Omitted]55.6 dBc with predistortion, compared to [Formula Omitted]35.5 dBc and [Formula Omitted]48.1 dBc without predistortion. For the LTE signal with +23.3 dBm of channel power, the measured ACLR at 5 MHz offset was [Formula Omitted]43.5 dBc with predistortion, compared to [Formula Omitted]34.1 dBc without predistortion.
This paper presents a model-based phase-only predistortion method suitable for outphasing radio frequency (RF) power amplifiers (PA). The predistortion method is based on a model of the amplifier with a constant gain factor and phase rotation for each outphasing signal, and a predistorter with phase rotation only. Exploring the structure of the outphasing PA, the model estimation problem can be reformulated from a nonconvex problem into a convex least-squares problem, and the predistorter can be calculated analytically. The method has been evaluated for 5 MHz Wideband Code-Division Multiple Access (WCDMA) and Long Term Evolution (LTE) uplink signals with Peak-to-Average Power Ratio (PAPR) of 3.5 dB and 6.2 dB, respectively, applied to one of the first fully integrated +30 dBm Class-D outphasing RF PAs in 65 nm CMOS. At 1.95 GHz for a 5.5 V (6.0 V) supply voltage, the measured output power of the PA was +29.7 dBm (+30.5 dBm) with a power-added efficiency (PAE) of 27%. For the WCDMA signal with +26.0 dBm of channel power, the measured Adjacent Channel Leakage Ratio (ACLR) at 5 MHz and 10 MHz offsets were - 46.3 dBc and - 55.6 dBc with predistortion, compared to -35.5 dBc and -48.1 dBc without predistortion. For the LTE signal with +23.3 dBm of channel power, the measured ACLR at 5 MHz offset was - 43.5 dBc with predistortion, compared to -34.1 dBc without predistortion.
Author Jung, Ylva
Enqvist, M.
Alvandpour, A.
Fritzin, J.
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Snippet This paper presents a model-based phase-only predistortion method suitable for outphasing radio frequency (RF) power amplifiers (PA). The predistortion method...
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SubjectTerms Amplifier
CMOS integrated circuits
complementary metal-oxide-semiconductor (CMOS)
Gain
linearization
Multiaccess communication
Optimization
outphasing
Phase distortion
Predistortion
Radio frequency
Studies
Title Least-Squares Phase Predistortion of a +30 dBm Class-D Outphasing RF PA in 65 nm CMOS
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