The polaron in a GaAs/AlAs quantum well

• Published in: Physica. B, Condensed matter Vol. 253; no. 3; pp. 325 - 334
• Main Authors: Mora-Ramos, M.E., Contreras-Solorio, D.A.
• Format: Journal Article
• Language: English
• Published: Amsterdam Elsevier B.V 01.10.1998; Elsevier
• Subjects: Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states; Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Exact sciences and technology; Physics; Polaron corrections; Polarons and electron-phonon interactions; Quantum well; Quantum well; Polaron corrections; Aluminium arsenides; Gallium arsenides; Inorganic compounds; Semiconductor materials; Quantum wells; Theoretical study; Binary compounds; Electron-phonon interactions; Phenomenological model; Electronic structure; Electron interaction; Effective mass; Polarons
• DOI: 10.1016/S0921-4526(98)00292-0
• ISSN: 0921-4526

Polaron binding energy and effective mass are calculated for the case of a GaAs/AlAs quantum well with the use of a phenomenological model for the long-wavelength polar optical oscillations which accounts for the coupling between the longitudinal and transverse components of the vibrations as well as for the coupling between mechanical and electrical fields. It is shown that the contribution of GaAs-like modes to the electron–phonon interaction in that system, gives polaronic corrections with values well below those obtained in previous works.