Surface Acoustic Wave Devices Using Lithium Niobate on Silicon Carbide

• Published in: IEEE transactions on microwave theory and techniques Vol. 68; no. 9; pp. 3653 - 3666
• Main Authors: Zhang, Shibin, Lu, Ruochen, Zhou, Hongyan, Link, Steffen, Yang, Yansong, Li, Zhongxu, Huang, Kai, Ou, Xin, Gong, Songbin
• Format: Journal Article
• Language: English
• Published: New York IEEE 01.09.2020; The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
• Subjects: Chemical bonds; Diamond; Electric arcs; Figure of merit; Figure of merit (FoM); Frequency ranges; Group delay; impedance ratio; Insertion loss; Lithium niobate; Lithium niobates; MEMS; piezoelectric filters; piezoelectric resonators; power handling; Q factors; Resonant frequency; Resonators; shear horizontal (SH0) modes; Silicon; Silicon carbide; Silicon substrates; Single crystals; Slicing; Substrates; Surface acoustic wave devices; Surface acoustic waves; temperature of frequency (TCF); Thin films

This work demonstrates a group of shear horizontal (SH0) mode resonators and filters using lithium niobate (LiNbO 3 ) thin films on silicon carbide (SiC). The single-crystalline X-cut LiNbO 3 thin films on 4H-SiC substrates have been prepared by ion-slicing and wafer-bonding processes. The fabricate...