On-Chip mm-Wave Second-/Third-Order BPF and Balun With Wide Stopband and Low Radiation Loss Using SIDGS Resonators in 40-nm CMOS

In this article, two millimeter-wave substrate-integrated defected ground structure (SIDGS) resonators are proposed for filters and balun implementation. Such SIDGS resonators are composed of defected ground structure (DGS) with grounded shield and surrounding vias, which not only exhibit wide stopb...

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Published inIEEE transactions on microwave theory and techniques Vol. 71; no. 5; pp. 1 - 15
Main Authors Tang, Deshan, Luo, Xun
Format Journal Article
LanguageEnglish
Published New York IEEE 01.05.2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE)
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Abstract In this article, two millimeter-wave substrate-integrated defected ground structure (SIDGS) resonators are proposed for filters and balun implementation. Such SIDGS resonators are composed of defected ground structure (DGS) with grounded shield and surrounding vias, which not only exhibit wide stopband with low radiation loss but also are flexible to integrate with active circuits. Using different coupling methods, second-/third-order bandpass filters (BPFs) and filtering balun are designed based on the proposed SIDGS resonators. The filters and balun are fabricated in a standard 40-nm complementary metal-oxide-semiconductor (CMOS) technology. The second-order filter is centered at 28 GHz with an insertion loss of the 2.7-and 3-dB FBW of 20.4%. Meanwhile, the stopband extends to 140 GHz with a rejection level of 30 dB. The third-order filter operates at 28 GHz with an insertion loss of the 2.9-and 3-dB FBW of 47%. Meanwhile, the stopband extends to 170 GHz with a rejection level of 27 dB. The filtering balun operating at 25 GHz with the 3-dB FBW of 32% exhibits in-band amplitude/phase imbalances of 0.6 dB and <inline-formula> <tex-math notation="LaTeX">\pm</tex-math> </inline-formula>1.1<inline-formula> <tex-math notation="LaTeX">^\circ</tex-math> </inline-formula>, respectively. The minimum in-band insertion loss is 2 dB excluding the theoretical 3-dB loss. The stopband extends to 175 GHz with a rejection level of 30 dB.
AbstractList In this article, two millimeter-wave substrate-integrated defected ground structure (SIDGS) resonators are proposed for filters and balun implementation. Such SIDGS resonators are composed of defected ground structure (DGS) with grounded shield and surrounding vias, which not only exhibit wide stopband with low radiation loss but also are flexible to integrate with active circuits. Using different coupling methods, second-/third-order bandpass filters (BPFs) and filtering balun are designed based on the proposed SIDGS resonators. The filters and balun are fabricated in a standard 40-nm complementary metal-oxide-semiconductor (CMOS) technology. The second-order filter is centered at 28 GHz with an insertion loss of the 2.7 db and 3-dB FBW of 20.4%. Meanwhile, the stopband extends to 140 GHz with a rejection level of 30 dB. The third-order filter operates at 28 GHz with an insertion loss of the 2.9 db and 3-dB FBW of 47%. Meanwhile, the stopband extends to 170 GHz with a rejection level of 27 dB. The filtering balun operating at 25 GHz with the 3-dB FBW of 32% exhibits in-band amplitude/phase imbalances of 0.6 dB and ±1.1°, respectively. The minimum in-band insertion loss is 2 dB excluding the theoretical 3-dB loss. The stopband extends to 175 GHz with a rejection level of 30 dB.
In this article, two millimeter-wave substrate-integrated defected ground structure (SIDGS) resonators are proposed for filters and balun implementation. Such SIDGS resonators are composed of defected ground structure (DGS) with grounded shield and surrounding vias, which not only exhibit wide stopband with low radiation loss but also are flexible to integrate with active circuits. Using different coupling methods, second-/third-order bandpass filters (BPFs) and filtering balun are designed based on the proposed SIDGS resonators. The filters and balun are fabricated in a standard 40-nm complementary metal-oxide-semiconductor (CMOS) technology. The second-order filter is centered at 28 GHz with an insertion loss of the 2.7-and 3-dB FBW of 20.4%. Meanwhile, the stopband extends to 140 GHz with a rejection level of 30 dB. The third-order filter operates at 28 GHz with an insertion loss of the 2.9-and 3-dB FBW of 47%. Meanwhile, the stopband extends to 170 GHz with a rejection level of 27 dB. The filtering balun operating at 25 GHz with the 3-dB FBW of 32% exhibits in-band amplitude/phase imbalances of 0.6 dB and <inline-formula> <tex-math notation="LaTeX">\pm</tex-math> </inline-formula>1.1<inline-formula> <tex-math notation="LaTeX">^\circ</tex-math> </inline-formula>, respectively. The minimum in-band insertion loss is 2 dB excluding the theoretical 3-dB loss. The stopband extends to 175 GHz with a rejection level of 30 dB.
Author Tang, Deshan
Luo, Xun
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Snippet In this article, two millimeter-wave substrate-integrated defected ground structure (SIDGS) resonators are proposed for filters and balun implementation. Such...
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SubjectTerms Baluns
Bandpass filter (BPF)
Bandpass filters
CMOS
complementary metal-oxide-semiconductor (CMOS)
Electromagnetic wave filters
filtering balun
Impedance
Insertion loss
low radiation loss
Millimeter waves
millimeter-wave
on-chip
Power transmission lines
Radiation
Rejection
Resonant frequency
resonator
Resonators
substrate-integrated defected ground structure (SIDGS)
Substrates
System-on-chip
wide stopband
Title On-Chip mm-Wave Second-/Third-Order BPF and Balun With Wide Stopband and Low Radiation Loss Using SIDGS Resonators in 40-nm CMOS
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