On-Chip mm-Wave Second-/Third-Order BPF and Balun With Wide Stopband and Low Radiation Loss Using SIDGS Resonators in 40-nm CMOS
In this article, two millimeter-wave substrate-integrated defected ground structure (SIDGS) resonators are proposed for filters and balun implementation. Such SIDGS resonators are composed of defected ground structure (DGS) with grounded shield and surrounding vias, which not only exhibit wide stopb...
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Published in | IEEE transactions on microwave theory and techniques Vol. 71; no. 5; pp. 1 - 15 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
New York
IEEE
01.05.2023
The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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Abstract | In this article, two millimeter-wave substrate-integrated defected ground structure (SIDGS) resonators are proposed for filters and balun implementation. Such SIDGS resonators are composed of defected ground structure (DGS) with grounded shield and surrounding vias, which not only exhibit wide stopband with low radiation loss but also are flexible to integrate with active circuits. Using different coupling methods, second-/third-order bandpass filters (BPFs) and filtering balun are designed based on the proposed SIDGS resonators. The filters and balun are fabricated in a standard 40-nm complementary metal-oxide-semiconductor (CMOS) technology. The second-order filter is centered at 28 GHz with an insertion loss of the 2.7-and 3-dB FBW of 20.4%. Meanwhile, the stopband extends to 140 GHz with a rejection level of 30 dB. The third-order filter operates at 28 GHz with an insertion loss of the 2.9-and 3-dB FBW of 47%. Meanwhile, the stopband extends to 170 GHz with a rejection level of 27 dB. The filtering balun operating at 25 GHz with the 3-dB FBW of 32% exhibits in-band amplitude/phase imbalances of 0.6 dB and <inline-formula> <tex-math notation="LaTeX">\pm</tex-math> </inline-formula>1.1<inline-formula> <tex-math notation="LaTeX">^\circ</tex-math> </inline-formula>, respectively. The minimum in-band insertion loss is 2 dB excluding the theoretical 3-dB loss. The stopband extends to 175 GHz with a rejection level of 30 dB. |
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AbstractList | In this article, two millimeter-wave substrate-integrated defected ground structure (SIDGS) resonators are proposed for filters and balun implementation. Such SIDGS resonators are composed of defected ground structure (DGS) with grounded shield and surrounding vias, which not only exhibit wide stopband with low radiation loss but also are flexible to integrate with active circuits. Using different coupling methods, second-/third-order bandpass filters (BPFs) and filtering balun are designed based on the proposed SIDGS resonators. The filters and balun are fabricated in a standard 40-nm complementary metal-oxide-semiconductor (CMOS) technology. The second-order filter is centered at 28 GHz with an insertion loss of the 2.7 db and 3-dB FBW of 20.4%. Meanwhile, the stopband extends to 140 GHz with a rejection level of 30 dB. The third-order filter operates at 28 GHz with an insertion loss of the 2.9 db and 3-dB FBW of 47%. Meanwhile, the stopband extends to 170 GHz with a rejection level of 27 dB. The filtering balun operating at 25 GHz with the 3-dB FBW of 32% exhibits in-band amplitude/phase imbalances of 0.6 dB and ±1.1°, respectively. The minimum in-band insertion loss is 2 dB excluding the theoretical 3-dB loss. The stopband extends to 175 GHz with a rejection level of 30 dB. In this article, two millimeter-wave substrate-integrated defected ground structure (SIDGS) resonators are proposed for filters and balun implementation. Such SIDGS resonators are composed of defected ground structure (DGS) with grounded shield and surrounding vias, which not only exhibit wide stopband with low radiation loss but also are flexible to integrate with active circuits. Using different coupling methods, second-/third-order bandpass filters (BPFs) and filtering balun are designed based on the proposed SIDGS resonators. The filters and balun are fabricated in a standard 40-nm complementary metal-oxide-semiconductor (CMOS) technology. The second-order filter is centered at 28 GHz with an insertion loss of the 2.7-and 3-dB FBW of 20.4%. Meanwhile, the stopband extends to 140 GHz with a rejection level of 30 dB. The third-order filter operates at 28 GHz with an insertion loss of the 2.9-and 3-dB FBW of 47%. Meanwhile, the stopband extends to 170 GHz with a rejection level of 27 dB. The filtering balun operating at 25 GHz with the 3-dB FBW of 32% exhibits in-band amplitude/phase imbalances of 0.6 dB and <inline-formula> <tex-math notation="LaTeX">\pm</tex-math> </inline-formula>1.1<inline-formula> <tex-math notation="LaTeX">^\circ</tex-math> </inline-formula>, respectively. The minimum in-band insertion loss is 2 dB excluding the theoretical 3-dB loss. The stopband extends to 175 GHz with a rejection level of 30 dB. |
Author | Tang, Deshan Luo, Xun |
Author_xml | – sequence: 1 givenname: Deshan orcidid: 0000-0001-9009-6613 surname: Tang fullname: Tang, Deshan organization: Center for Advanced Semiconductor and Integrated Micro-System, University of Electronic Science and Technology of China, Chengdu, China – sequence: 2 givenname: Xun orcidid: 0000-0002-1318-9418 surname: Luo fullname: Luo, Xun organization: Center for Advanced Semiconductor and Integrated Micro-System, University of Electronic Science and Technology of China, Chengdu, China |
BookMark | eNp9kE1PGzEQhq2KSg20P6DqxRJnB39_HCEQQApKRRZxXBnb2xgldrA3VL31p3eXoB566GFmNJr3ndE8x-Ao5RQA-ErwlBBszpq7pplSTOmUUSo5Mx_AhAihkJEKH4EJxkQjwzX-BI5rfR5aLrCegN_LhGbruIPbLXq0rwGugsvJo7NmHYtHy-JDgRff59AmDy_sZp_gY-zXQ_KDts-7p3EwxiL_hPfWR9vHnIauVvhQY_oBV7eX1yt4H2pOts-lwpggxyht4exuufoMPnZ2U8OX93oCHuZXzewGLZbXt7PzBXKMyR5JKpUUWlrjlPChU5YT5zvupPBSMS6CdyqYTjsqLRMKc675EyOBdkIr27ETcHrYuyv5ZR9q3z7nfUnDyZZqbLQyQohBRQ4qV4YHSujaXYlbW361BLcj6HYE3Y6g23fQg0f943Gxf6PQFxs3_3V-OzhjCOHvJWM05UawP2ZNitM |
CODEN | IETMAB |
CitedBy_id | crossref_primary_10_1109_TMTT_2023_3316358 crossref_primary_10_1109_JMW_2025_3532217 crossref_primary_10_1109_JMW_2024_3482433 crossref_primary_10_1364_OE_484218 crossref_primary_10_1002_mop_34313 |
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ContentType | Journal Article |
Copyright | Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023 |
Copyright_xml | – notice: Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2023 |
DBID | 97E ESBDL RIA RIE AAYXX CITATION 7SP 8FD L7M |
DOI | 10.1109/TMTT.2022.3226439 |
DatabaseName | IEEE All-Society Periodicals Package (ASPP) 2005-present IEEE Open Access Journals IEEE All-Society Periodicals Package (ASPP) 1998-Present IEEE Electronic Library (IEL) CrossRef Electronics & Communications Abstracts Technology Research Database Advanced Technologies Database with Aerospace |
DatabaseTitle | CrossRef Technology Research Database Advanced Technologies Database with Aerospace Electronics & Communications Abstracts |
DatabaseTitleList | Technology Research Database |
Database_xml | – sequence: 1 dbid: RIE name: IEEE Electronic Library (IEL) url: https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/ sourceTypes: Publisher |
DeliveryMethod | fulltext_linktorsrc |
Discipline | Engineering |
EISSN | 1557-9670 |
EndPage | 15 |
ExternalDocumentID | 10_1109_TMTT_2022_3226439 9982495 |
Genre | orig-research |
GrantInformation_xml | – fundername: National Natural Science Foundation of China grantid: 62161160310; 61934001 funderid: 10.13039/501100001809 |
GroupedDBID | -~X 0R~ 29I 4.4 5GY 66. 6IK 85S 97E AAJGR AARMG AASAJ AAWTH ABAZT ABQJQ ABVLG ACGFO ACGFS ACIWK ACNCT AENEX AGQYO AHBIQ AKJIK AKQYR ALMA_UNASSIGNED_HOLDINGS ATWAV BEFXN BFFAM BGNUA BKEBE BPEOZ CS3 DU5 EBS ESBDL F5P HZ~ IFIPE IPLJI JAVBF LAI M43 O9- OCL P2P RIA RIE RNS RXW TAE TN5 .GJ 3EH 5VS AAYXX AETIX AGSQL AI. AIBXA ALLEH CITATION EJD H~9 IAAWW IBMZZ ICLAB IDIHD IFJZH RIG TAF VH1 VJK VOH 7SP 8FD L7M |
ID | FETCH-LOGICAL-c336t-62676586a9c75def7a41cdf4c65d67345edc7e9f8c26a35704484b31e2f587af3 |
IEDL.DBID | RIE |
ISSN | 0018-9480 |
IngestDate | Mon Jun 30 10:18:44 EDT 2025 Thu Apr 24 22:53:20 EDT 2025 Tue Jul 01 02:00:26 EDT 2025 Wed Aug 27 02:29:15 EDT 2025 |
IsDoiOpenAccess | true |
IsOpenAccess | true |
IsPeerReviewed | true |
IsScholarly | true |
Issue | 5 |
Language | English |
License | https://creativecommons.org/licenses/by/4.0/legalcode |
LinkModel | DirectLink |
MergedId | FETCHMERGED-LOGICAL-c336t-62676586a9c75def7a41cdf4c65d67345edc7e9f8c26a35704484b31e2f587af3 |
Notes | ObjectType-Article-1 SourceType-Scholarly Journals-1 ObjectType-Feature-2 content type line 14 |
ORCID | 0000-0002-1318-9418 0000-0001-9009-6613 |
OpenAccessLink | https://proxy.k.utb.cz/login?url=https://ieeexplore.ieee.org/document/9982495 |
PQID | 2809879555 |
PQPubID | 106035 |
PageCount | 15 |
ParticipantIDs | proquest_journals_2809879555 crossref_citationtrail_10_1109_TMTT_2022_3226439 crossref_primary_10_1109_TMTT_2022_3226439 ieee_primary_9982495 |
ProviderPackageCode | CITATION AAYXX |
PublicationCentury | 2000 |
PublicationDate | 2023-05-01 |
PublicationDateYYYYMMDD | 2023-05-01 |
PublicationDate_xml | – month: 05 year: 2023 text: 2023-05-01 day: 01 |
PublicationDecade | 2020 |
PublicationPlace | New York |
PublicationPlace_xml | – name: New York |
PublicationTitle | IEEE transactions on microwave theory and techniques |
PublicationTitleAbbrev | TMTT |
PublicationYear | 2023 |
Publisher | IEEE The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
Publisher_xml | – name: IEEE – name: The Institute of Electrical and Electronics Engineers, Inc. (IEEE) |
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References_xml | – ident: ref22 doi: 10.1109/TMTT.2018.2873342 – ident: ref8 doi: 10.1109/LED.2013.2265165 – ident: ref6 doi: 10.1109/TCSII.2008.922427 – year: 2013 ident: ref40 publication-title: Microstrip Lines and Slotlines – ident: ref34 doi: 10.1109/APMC.2012.6421566 – volume: 58 start-page: 176 year: 2010 ident: ref11 article-title: Analysis and design of a chip filter with low insertion loss and two adjustable transmission zeros using 0.18-?m CMOS technology publication-title: IEEE Trans Microw Theory Techn doi: 10.1109/TMTT.2009.2035871 – ident: ref24 doi: 10.1109/TMTT.2011.2140123 – ident: ref9 doi: 10.1109/LMWC.2016.2597219 – ident: ref31 doi: 10.1109/LMWC.2016.2623255 – ident: ref18 doi: 10.1109/TCSI.2019.2948754 – ident: ref13 doi: 10.1109/TCSII.2010.2048395 – ident: ref39 doi: 10.1109/LMWC.2021.3136561 – ident: ref1 doi: 10.1109/JSSC.2006.872737 – ident: ref23 doi: 10.1109/JSSC.2021.3078485 – ident: ref26 doi: 10.1109/TMTT.2007.897689 – ident: ref2 doi: 10.1109/TCSI.2012.2206499 – volume: 29 start-page: 246 year: 2008 ident: ref5 article-title: A 60-GHz millimeter-wave bandpass filter using 0.18-?m CMOS technology publication-title: IEEE Electron Device Lett doi: 10.1109/LED.2007.915369 – ident: ref41 doi: 10.1109/TMTT.2011.2138713 – ident: ref20 doi: 10.1109/TMTT.2019.2949293 – volume: 51 start-page: 1009 year: 2003 ident: ref45 article-title: Analysis and design of miniaturized lumped-distributed impedance-transforming baluns publication-title: IEEE Trans Microw Theory Techn doi: 10.1109/TMTT.2003.808677 – ident: ref15 doi: 10.1109/LED.2016.2520960 – ident: ref30 doi: 10.1109/LMWC.2014.2313719 – ident: ref19 doi: 10.1109/TMTT.2019.2895581 – ident: ref3 doi: 10.1109/LED.2007.891305 – ident: ref37 doi: 10.1109/LMWC.2021.3065416 – volume: 58 start-page: 814 year: 2010 ident: ref32 article-title: On-chip single-to-balanced multicoupled line bandpass filters with good selectivity publication-title: IEEE Trans Microw Theory Techn – ident: ref44 doi: 10.1109/4.868049 – ident: ref21 doi: 10.1109/TCSI.2018.2839701 – ident: ref29 doi: 10.1109/LMWC.2017.2690854 – ident: ref36 doi: 10.1109/LMWC.2020.3036419 – ident: ref25 doi: 10.1109/TMTT.2018.2811494 – ident: ref28 doi: 10.1109/LED.2014.2304612 – volume: 58 start-page: 814 year: 2010 ident: ref27 article-title: Design of an on-chip balun with a minimum amplitude imbalance using a symmetric stack layout publication-title: IEEE Trans Microw Theory Techn doi: 10.1109/TMTT.2010.2041590 – ident: ref42 doi: 10.1109/33.159877 – ident: ref35 doi: 10.1109/TMTT.2020.3038202 – ident: ref17 doi: 10.1109/LED.2017.2739186 – ident: ref46 doi: 10.1109/JSSC.2009.2028752 – year: 2012 ident: ref43 publication-title: Microwave Engineering – volume: 58 start-page: 3850 year: 2010 ident: ref7 article-title: Compact millimeter-wave CMOS bandpass filters using grounded pedestal stepped-impedance technique publication-title: IEEE Trans Microw Theory Techn – ident: ref4 doi: 10.1109/TMTT.2007.892817 – ident: ref33 doi: 10.1109/MWSYM.2015.7167114 – ident: ref38 doi: 10.1109/LMWC.2021.3053756 – ident: ref10 doi: 10.1109/LMWC.2017.2734771 – ident: ref16 doi: 10.1109/LED.2017.2690283 – ident: ref12 doi: 10.1109/LED.2010.2043333 – ident: ref14 doi: 10.1109/TED.2012.2186301 |
SSID | ssj0014508 |
Score | 2.4625237 |
Snippet | In this article, two millimeter-wave substrate-integrated defected ground structure (SIDGS) resonators are proposed for filters and balun implementation. Such... |
SourceID | proquest crossref ieee |
SourceType | Aggregation Database Enrichment Source Index Database Publisher |
StartPage | 1 |
SubjectTerms | Baluns Bandpass filter (BPF) Bandpass filters CMOS complementary metal-oxide-semiconductor (CMOS) Electromagnetic wave filters filtering balun Impedance Insertion loss low radiation loss Millimeter waves millimeter-wave on-chip Power transmission lines Radiation Rejection Resonant frequency resonator Resonators substrate-integrated defected ground structure (SIDGS) Substrates System-on-chip wide stopband |
Title | On-Chip mm-Wave Second-/Third-Order BPF and Balun With Wide Stopband and Low Radiation Loss Using SIDGS Resonators in 40-nm CMOS |
URI | https://ieeexplore.ieee.org/document/9982495 https://www.proquest.com/docview/2809879555 |
Volume | 71 |
hasFullText | 1 |
inHoldings | 1 |
isFullTextHit | |
isPrint | |
link | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3Nb9MwFH_adoIDMAaiMCYfOCHcOrGdjyPrVgaiFNFM2y1y_KFWrG61piBx4k_HL0mrCRDikChR7MjS79l-P78vgFdJZqVJq4hyLnKKKc5pZnVOla1UpsOO7Cwe6I8_JReX4sO1vN6DN7tYGGtt43xm-_jY2PLNUm_wqGwQqAGWSt6H_UDc2litncVASNatumECi2xrwYxYPijGRRGYYBz3OYaNYl3wO3tQU1Tlj5W42V5GD2G8HVjrVfK1v6mrvv7xW87G_x35I3jQ6ZnkbSsYh7Bn_WO4fyf74BH8nHg6nM1XZLGgV-qbJVMkx4YOitn81tAJJuUkp59HRHlDTtXNxpOreT0LNxPa1stVhR_w-rj8Tr5gkgNEObyt16RxRSDT92fvpgRNBB7J_ZrMPRGM-gUZjifTJ3A5Oi-GF7QryEA150lNA_lJg8aSqFyn0liXKhFp44ROpElSLqQ1OrW5y3ScKC5TFrifqHhkYyezVDn-FA780ttnQJx2GEYV6BpzgXQluYm0UiZof1KFn7MesC1Epe6ylWPRjJuyYS0sLxHVElEtO1R78HrXZdWm6vhX4yNEadewA6gHx1s5KLvJvC7jjOVYk13K53_v9QLuYRX61g_yGA7q2419GXSVujpphPQXr7bisw |
linkProvider | IEEE |
linkToHtml | http://utb.summon.serialssolutions.com/2.0.0/link/0/eLvHCXMwjV3Nb9MwFLfGOMAOGzAQHQN84IRw68R2Po6sUDpoVkQzbbfI8YdabXWrNQWJE3_6_JK0mgAhDokSxY4s_Wy_9_P7QuhNlBih4zIgjPGUQIpzkhiVEmlKmSgvka2BA_3sLBqe88-X4nIHvdvGwhhjaucz04XH2pavF2oNR2U9Tw2gVPI9dN_LfRE00VpbmwEXtN13_RLmycaGGdC0l2d57rlgGHYZBI5CZfA7Uqguq_LHXlwLmMEByjZDa_xKrrrrquyqn79lbfzfsT9C-62mid83U-Mx2jHuCdq7k3_wEP0aO9KfzpZ4PicX8rvBE6DHmvTy6exGkzGk5cQnXwdYOo1P5PXa4YtZNfU37dtWi2UJH-AaLX7gb5DmAHD2b6sVrp0R8OT0w6cJBiOBA3q_wjOHOSVujvvZePIUnQ8-5v0haUsyEMVYVBFPf2Kvs0QyVbHQxsaSB0pbriKho5hxYbSKTWoTFUaSiZh69sdLFpjQiiSWlj1Du27hzHOErbIQSOUJG7WedkWpDpSU2ut_Qvqf0w6iG4gK1eYrh7IZ10XNW2haAKoFoFq0qHbQ222XZZOs41-NDwGlbcMWoA463syDol3OqyJMaApV2YU4-nuv1-jBMM9Gxej07MsL9BBq0jdekcdot7pZm5dec6nKV_WEvQWtweX8 |
openUrl | ctx_ver=Z39.88-2004&ctx_enc=info%3Aofi%2Fenc%3AUTF-8&rfr_id=info%3Asid%2Fsummon.serialssolutions.com&rft_val_fmt=info%3Aofi%2Ffmt%3Akev%3Amtx%3Ajournal&rft.genre=article&rft.atitle=On-Chip+mm-Wave+Second-%2FThird-Order+BPF+and+Balun+With+Wide+Stopband+and+Low+Radiation+Loss+Using+SIDGS+Resonators+in+40-nm+CMOS&rft.jtitle=IEEE+transactions+on+microwave+theory+and+techniques&rft.au=Tang%2C+Deshan&rft.au=Luo%2C+Xun&rft.date=2023-05-01&rft.pub=The+Institute+of+Electrical+and+Electronics+Engineers%2C+Inc.+%28IEEE%29&rft.issn=0018-9480&rft.eissn=1557-9670&rft.volume=71&rft.issue=5&rft.spage=2178&rft_id=info:doi/10.1109%2FTMTT.2022.3226439&rft.externalDBID=NO_FULL_TEXT |
thumbnail_l | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/lc.gif&issn=0018-9480&client=summon |
thumbnail_m | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/mc.gif&issn=0018-9480&client=summon |
thumbnail_s | http://covers-cdn.summon.serialssolutions.com/index.aspx?isbn=/sc.gif&issn=0018-9480&client=summon |