Optical behaviors of thin indium-containing chalcogenide films
The optical spectra of thin (GeSe5)100−xInx films, with x from 0 to 20 mol% indium, have been studied with a view to understanding the role of indium on the film behavior. An optical characterization method, based on the transmission and the reflection spectra at normal incidence of uniform, thin fi...
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| Published in | Surface and interface analysis Vol. 42; no. 6-7; pp. 1235 - 1238 |
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| Main Authors | , , , |
| Format | Journal Article |
| Language | English |
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Chichester, UK
John Wiley & Sons, Ltd
01.06.2010
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| Abstract | The optical spectra of thin (GeSe5)100−xInx films, with x from 0 to 20 mol% indium, have been studied with a view to understanding the role of indium on the film behavior. An optical characterization method, based on the transmission and the reflection spectra at normal incidence of uniform, thin films, has been used to obtain the thicknesses and optical constants corresponding to the as‐deposited and annealed samples. The dispersion of the refractive index is discussed in terms of the single‐oscillator Wemple‐Di Domenico model. The absorption edges are described using both the Urbach rule and the ‘nondirect transition’ model proposed by Tauc. The variations in the refractive index, the bandgap, and the oscillation energy of the films after annealing are discussed with respect to rearrangement of the main structure units. Copyright © 2010 John Wiley & Sons, Ltd. |
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| AbstractList | The optical spectra of thin (GeSe5)100-xInx films, with x from 0 to 20 mol% indium, have been studied with a view to understanding the role of indium on the film behavior. An optical characterization method, based on the transmission and the reflection spectra at normal incidence of uniform, thin films, has been used to obtain the thicknesses and optical constants corresponding to the as-deposited and annealed samples. The dispersion of the refractive index is discussed in terms of the single-oscillator Wemple-Di Domenico model. The absorption edges are described using both the Urbach rule and the 'nondirect transition' model proposed by Tauc. The variations in the refractive index, the bandgap, and the oscillation energy of the films after annealing are discussed with respect to rearrangement of the main structure units. Abstract The optical spectra of thin (GeSe 5 ) 100− x In x films, with x from 0 to 20 mol% indium, have been studied with a view to understanding the role of indium on the film behavior. An optical characterization method, based on the transmission and the reflection spectra at normal incidence of uniform, thin films, has been used to obtain the thicknesses and optical constants corresponding to the as‐deposited and annealed samples. The dispersion of the refractive index is discussed in terms of the single‐oscillator Wemple‐Di Domenico model. The absorption edges are described using both the Urbach rule and the ‘nondirect transition’ model proposed by Tauc. The variations in the refractive index, the bandgap, and the oscillation energy of the films after annealing are discussed with respect to rearrangement of the main structure units. Copyright © 2010 John Wiley & Sons, Ltd. The optical spectra of thin (GeSe5)100−xInx films, with x from 0 to 20 mol% indium, have been studied with a view to understanding the role of indium on the film behavior. An optical characterization method, based on the transmission and the reflection spectra at normal incidence of uniform, thin films, has been used to obtain the thicknesses and optical constants corresponding to the as‐deposited and annealed samples. The dispersion of the refractive index is discussed in terms of the single‐oscillator Wemple‐Di Domenico model. The absorption edges are described using both the Urbach rule and the ‘nondirect transition’ model proposed by Tauc. The variations in the refractive index, the bandgap, and the oscillation energy of the films after annealing are discussed with respect to rearrangement of the main structure units. Copyright © 2010 John Wiley & Sons, Ltd. |
| Author | Petkov, E. Petkov, P. Nedeva, Y. Stoilova, A. |
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| Cites_doi | 10.1103/PhysRevB.7.3767 10.1103/PhysRevB.3.1338 10.1016/0921-4526(93)90133-Q 10.1016/S0022-3093(99)00882-0 10.1088/0022-3735/17/10/023 10.1063/1.881994 10.7567/JJAPS.19S2.123 10.1007/BF02548774 |
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| References | R. Mehra, A. Ganjoo, G. Kaur, P. Mathur, J. Therm. Anal. 1995, 45, 405. S. H. Wemple, M. DiDomenico, Phys. Rev. B 1971, 3, 1338. S. H. Wemple, Phys. Rev. B 1973, 7, 3767. S. K. Shrivastava, P. K. Dwivedi, A. Kumar, Physica B 1993, 183, 409. K. Singh, N. S. Saxenaa, O. N. Srivastava, D. Patidara, T. P. Sharma, Chalc. Lett. 2006, 3, 33. R. Swanepoel, J. Phys. E: Sci. Instrum. 1984, 17, 896. J. Row Lands, S. Kasap, Phys. Today 1997, 50, 24. J. A. Savage, Infrared Optical Materials and their Antirefection Coatings, Adam Hilger: Bristol, 1985. G. B. Abdullaev, E. S. Guseinova, B. G. Tagiev, Phys. Stat. Sol. 1966, 17, 5. N. F. Mott, E. A. Davis, Electronics Process in Non-Crystalline Materials, Clarendon: Oxford, 1971. J. Tauc, Amorphous and Liquid Semiconductors, Plenum: New York, 1979. T. Matusita, A. Suzuki, M. Okuda, T. Sakai, Jpn. J. Appl. Phys. 1980, S19, 123. M. M. Wakkad, E. K. Shokr, S. H. Mohamed, J. Non-Cryst. Solids 2000, 265, 157. S. Elliott, Physics of Amorphous Materials, Longman: London, 1990. 1997; 50 1966; 17 1980; S19 1990 1984; 17 1995; 45 1993; 183 2009 1985 2006; 3 1971 2000; 265 1973; 7 1979 1971; 3 Savage J. A. (e_1_2_1_2_2) 1985 Abdullaev G. B. (e_1_2_1_9_2) 1966; 17 Elliott S. (e_1_2_1_12_2) 1990 e_1_2_1_4_2 Singh K. (e_1_2_1_6_2) 2006; 3 Tauc J. (e_1_2_1_7_2) 1979 e_1_2_1_5_2 e_1_2_1_11_2 e_1_2_1_3_2 e_1_2_1_10_2 e_1_2_1_15_2 e_1_2_1_16_2 e_1_2_1_13_2 e_1_2_1_14_2 e_1_2_1_17_2 Mott N. F. (e_1_2_1_8_2) 1971 |
| References_xml | – year: 1985 – volume: 7 start-page: 3767 year: 1973 publication-title: Phys. Rev. B – volume: 17 start-page: 5 year: 1966 publication-title: Phys. Stat. Sol. – year: 2009 – volume: 3 start-page: 33 year: 2006 publication-title: Chalc. Lett. – volume: 17 start-page: 896 year: 1984 publication-title: J. Phys. E: Sci. Instrum. – start-page: 131 year: 2009 – volume: S19 start-page: 123 year: 1980 publication-title: Jpn. J. Appl. Phys. – volume: 265 start-page: 157 year: 2000 publication-title: J. Non‐Cryst. Solids – volume: 45 start-page: 405 year: 1995 publication-title: J. Therm. Anal. – volume: 50 start-page: 24 year: 1997 publication-title: Phys. Today – year: 1971 – volume: 3 start-page: 1338 year: 1971 publication-title: Phys. Rev. B – year: 1979 – year: 1990 – volume: 183 start-page: 409 year: 1993 publication-title: Physica B – ident: e_1_2_1_17_2 – ident: e_1_2_1_15_2 doi: 10.1103/PhysRevB.7.3767 – volume: 17 start-page: 5 year: 1966 ident: e_1_2_1_9_2 publication-title: Phys. Stat. Sol. contributor: fullname: Abdullaev G. B. – ident: e_1_2_1_14_2 doi: 10.1103/PhysRevB.3.1338 – volume-title: Infrared Optical Materials and their Antirefection Coatings year: 1985 ident: e_1_2_1_2_2 contributor: fullname: Savage J. A. – volume-title: Electronics Process in Non‐Crystalline Materials year: 1971 ident: e_1_2_1_8_2 contributor: fullname: Mott N. F. – ident: e_1_2_1_16_2 – ident: e_1_2_1_4_2 doi: 10.1016/0921-4526(93)90133-Q – volume-title: Amorphous and Liquid Semiconductors year: 1979 ident: e_1_2_1_7_2 contributor: fullname: Tauc J. – ident: e_1_2_1_5_2 doi: 10.1016/S0022-3093(99)00882-0 – volume: 3 start-page: 33 year: 2006 ident: e_1_2_1_6_2 publication-title: Chalc. Lett. contributor: fullname: Singh K. – ident: e_1_2_1_13_2 doi: 10.1088/0022-3735/17/10/023 – ident: e_1_2_1_3_2 doi: 10.1063/1.881994 – ident: e_1_2_1_10_2 doi: 10.7567/JJAPS.19S2.123 – volume-title: Physics of Amorphous Materials year: 1990 ident: e_1_2_1_12_2 contributor: fullname: Elliott S. – ident: e_1_2_1_11_2 doi: 10.1007/BF02548774 |
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| Snippet | The optical spectra of thin (GeSe5)100−xInx films, with x from 0 to 20 mol% indium, have been studied with a view to understanding the role of indium on the... Abstract The optical spectra of thin (GeSe 5 ) 100− x In x films, with x from 0 to 20 mol% indium, have been studied with a view to understanding the role of... The optical spectra of thin (GeSe5)100-xInx films, with x from 0 to 20 mol% indium, have been studied with a view to understanding the role of indium on the... |
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| SubjectTerms | Annealing bandgap structure chalcogenide glasses Chalcogenides Indium Mathematical models optical properties Refractive index Refractivity Spectra Thin films |
| Title | Optical behaviors of thin indium-containing chalcogenide films |
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