Communication—Controlling Etching of Germanium through Surface Charge Manipulation

• Published in: Journal of the Electrochemical Society Vol. 171; no. 2; pp. 23505 - 23507
• Main Authors: Wood, Joseph G., Mitsyuk, Surge, Brayfield, Cassondra, Carpenter, Arthur, Hunt, Charles E., van Benthem, Klaus
• Format: Journal Article
• Language: English
• Published: United States IOP Publishing 01.02.2024; The Electrochemical Society
• Subjects: etching - electrochemical; INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY; Lasers; semiconductors; surface modification

Potassium hydroxide (KOH) aqueous solutions can effectively etch germanium. Etch rates were determined in an electrolytic etch cell. Electrically isolated Ge wafers were subject to an etch rate of 1.45 ± 0.07 nm min −1 , increasing to 12.6 ± 0.2 nm min −1 when grounded, 97 ± 2 nm min −1 when biased...