The misfit dislocation structure of an InGaAs/GaAs heterojunction with low misfit

• Published in: Thin solid films Vol. 42; no. 1; pp. 117 - 125
• Main Authors: Ahearn, J.S., Laird, C., Ball, C.A.B.
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.04.1977
• ISSN: 0040-6090; 1879-2731
• DOI: 10.1016/0040-6090(77)90085-2

The dislocation structure in an InGaAs/GaAs heterojunction with an epilayer thickness of 8 μm and a misfit of 0.003 was studied by X-ray topographic techniques. Misorientations in the approximately square cross-grid of dislocations permit the three-dimensional nature of the dislocation structure in the epilayer to be studied. The evidence presented here suggests that a source other than one of those previously favored is the dominant contributor to the interfacial dislocation structure; the most likely possibility is that the majority of dislocations are introduced at sources created by interactions of gliding threading dislocations.