Investigation of pulsed irradiation effects on interstitial loop growth in metals

A computer program for the solution of non steady-state diffusion equations describing the evolution of point defects and interstitial dislocation loops during pulsed and continuous irradiation is developed. The equations take into account mutual recombination of point defects, defect migration to d...

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Published inJournal of nuclear materials Vol. 90; no. 1; pp. 144 - 147
Main Authors Volobuev, A.V., Gann, V.V., Bereznyak, P.A., Kirjukhin, N.M.
Format Journal Article
LanguageEnglish
Published Elsevier B.V 01.01.1980
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Abstract A computer program for the solution of non steady-state diffusion equations describing the evolution of point defects and interstitial dislocation loops during pulsed and continuous irradiation is developed. The equations take into account mutual recombination of point defects, defect migration to dislocation loops and line dislocations, and the existence of equilibrium thermal vacancies. It is shown that interstitial loops grow from 2 to 9 run in diameter due to the surplus flux of interstitials in the non steady-state regime (dynamic preference) at 573 K. At 873 K the dislocation loops begin to shrink owing to line tension forces. Comparison of interstitial loop and vacancy behaviour for pulsed and continuous irradiation at 573 and 873 K is performed. It is shown that at pulse duration 2 × 10 −6 s and repetition rate 100 pulses/s, pulsing does not affect the interstitial loop behaviour.
AbstractList A computer program for the solution of non-steady-state diffusion equations describing the evolution of point defects and interstitial dislocation loops during pulsed and continuous irradiation is developed. The equations take into account mutual recombination of point defects, defect migration to dislocation loops and line dislocations and the existence of equilibrium thermal vacancies. It is shown that interstitial loops grow from 2 to 9 nm in dia. due to the surplus flux of interstitials in the non-steady-state regime (dynamic preference) at 573 deg K. At 873 deg K the dislocation loops begin to shrink owing to line tension forces. Comparison of interstitial loop and vacancy behavior for pulsed and continuous irradiation at 573 and 873 deg K is performed. It is shown that a pulse duration 2 x 10--6 s and repetition rate 100 pulses/s, pulsing does not affect the interstitial loop behavior.14 refs.--AA
A computer program for the solution of non steady-state diffusion equations describing the evolution of point defects and interstitial dislocation loops during pulsed and continuous irradiation is developed. The equations take into account mutual recombination of point defects, defect migration to dislocation loops and line dislocations, and the existence of equilibrium thermal vacancies. It is shown that interstitial loops grow from 2 to 9 run in diameter due to the surplus flux of interstitials in the non steady-state regime (dynamic preference) at 573 K. At 873 K the dislocation loops begin to shrink owing to line tension forces. Comparison of interstitial loop and vacancy behaviour for pulsed and continuous irradiation at 573 and 873 K is performed. It is shown that at pulse duration 2 × 10 −6 s and repetition rate 100 pulses/s, pulsing does not affect the interstitial loop behaviour.
Author Volobuev, A.V.
Gann, V.V.
Bereznyak, P.A.
Kirjukhin, N.M.
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