Encapsulation strategies on 2D materials for field effect transistors and photodetectors

• Published in: Chinese chemical letters Vol. 33; no. 5; pp. 2281 - 2290
• Main Authors: Huang, Wenjuan, Zhang, Yue, Song, Mengting, Wang, Bugao, Hou, Huayi, Hu, Xiaozong, Chen, Xiangbai, Zhai, Tianyou
• Format: Journal Article
• Language: English
• Published: Elsevier B.V 01.05.2022; Hubei Key Laboratory of Optical Information and Pattern Recognition,Wuhan Institute of Technology,Wuhan 430205,China; State Key Laboratory of Materials Processing and Die&Mould Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China%Hubei Key Laboratory of Optical Information and Pattern Recognition,Wuhan Institute of Technology,Wuhan 430205,China%Green Catalysis Center,College of Chemistry,Zhengzhou University,Zhengzhou 450001,China%State Key Laboratory of Materials Processing and Die&Mould Technology,School of Materials Science and Engineering,Huazhong University of Science and Technology,Wuhan 430074,China
• Subjects: Degradation; Encapsulation; Field effect transistors; Photodetectors; Stability; Two-dimensional materials; Two-dimensional materials; Encapsulation; Degradation; Photodetectors; Stability; Field effect transistors
• ISSN: 1001-8417; 1878-5964
• DOI: 10.1016/j.cclet.2021.08.086

Two-dimensional (2D) layered materials provide a promising alternative solution for overcoming the scaling limits in conventional Si-based devices. However, practical applications of 2D materials are facing crucial bottlenecks, particularly that arising from the instability under ambient condition. The studies of degradation mechanisms and protecting strategies for overcoming the ambient instability of 2D materials have attracted extensive research attentions, both experimentally and theoretically. This review attempts to provide an overview on the recent progress of the encapsulation strategies for 2D materials. The encapsulation strategies of mechanical transfer, polymer capping, atomic layer deposition, in-situ oxidation, and surface functionalization are systematically discussed for improving the ambient stability of 2D materials. In addition, the current advances in air-stable and high-performance 2D materials-based field effect transistors (FETs) and photodetectors assisted by the encapsulation strategies are outlined. Furthermore, the future directions of encapsulation techniques of 2D materials for FETs and photodetectors applications are suggested. Two-dimensional materials’ ambient instability poses a considerable challenge to their practical application in electronics and optoelectronics. Encapsulation provides a powerful strategy for achieving air-stable and high-performance 2D-based device [Display omitted] .