Structure of the Energy Spectrum of Holes in IV–VI Materials from a Different Viewpoint

• Published in: Semiconductors (Woodbury, N.Y.) Vol. 53; no. 7; pp. 875 - 881
• Main Authors: Prokofieva, L. V., Konstantinov, P. P.
• Format: Journal Article
• Language: English
• Published: Moscow Pleiades Publishing 01.07.2019; Springer; Springer Nature B.V
• Subjects: CARRIERS; Compensation; CONCENTRATION RATIO; CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; Current carriers; DOPED MATERIALS; Doping; ELECTRON PAIRS; Electronic Properties of Semiconductors; ENERGY SPECTRA; HOLES; HYSTERESIS; IMPURITIES; Intermetallic compounds; LEAD TELLURIDES; Magnetic Materials; Magnetism; Physics; Physics and Astronomy; TIN ADDITIONS

A twofold decrease in the hole concentration for all PbTe〈NaTe〉 samples at 77–450 K and the same effect attained at 77 K and upon heavy doping due only to the introduction of a small tin addition into PbTe, supplemented by the observation of temperature hysteresis in the hole concentration in the me...