Structure of the Energy Spectrum of Holes in IV–VI Materials from a Different Viewpoint
A twofold decrease in the hole concentration for all PbTe〈NaTe〉 samples at 77–450 K and the same effect attained at 77 K and upon heavy doping due only to the introduction of a small tin addition into PbTe, supplemented by the observation of temperature hysteresis in the hole concentration in the me...
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Published in | Semiconductors (Woodbury, N.Y.) Vol. 53; no. 7; pp. 875 - 881 |
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Main Authors | , |
Format | Journal Article |
Language | English |
Published |
Moscow
Pleiades Publishing
01.07.2019
Springer Springer Nature B.V |
Subjects | |
Online Access | Get full text |
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