The electrical properties of CdTe films grown by hot wall epitaxy
The electrical properties of CdTe thin films deposited on BaF 2 substrates were investigated. Different treatments of the substrates prior to deposition were tried. For films grown on thermally precleaned substrates the mobility increased exponentially with temperature in the temperature range 200–3...
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| Published in | Thin solid films Vol. 58; no. 1; pp. 21 - 27 |
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| Main Authors | , |
| Format | Journal Article |
| Language | English |
| Published |
Elsevier B.V
15.03.1979
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| Online Access | Get full text |
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| Summary: | The electrical properties of CdTe thin films deposited on BaF
2 substrates were investigated. Different treatments of the substrates prior to deposition were tried. For films grown on thermally precleaned substrates the mobility increased exponentially with temperature in the temperature range 200–300 K and decreased with increasing carrier concentration. These effects can be explained by means of a grain boundary model. However, the mobility of films deposited on substrates which have a very thin PbTe buffer layer showed a bulk-like temperature dependence. |
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| Bibliography: | ObjectType-Article-2 SourceType-Scholarly Journals-1 ObjectType-Feature-1 content type line 23 |
| ISSN: | 0040-6090 1879-2731 |
| DOI: | 10.1016/0040-6090(79)90201-3 |