Nonlinear gain coefficients in semiconductor lasers: effects of carrier heating
Nonlinear gain coefficients due to the effects of carrier heating are derived from the rate equations of carrier energy transfer in semiconductor lasers. We find that, in the modulation responses of semiconductor lasers, stimulated recombination heating will affect the resonant frequency and damping...
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Published in | IEEE journal of quantum electronics Vol. 32; no. 2; pp. 201 - 212 |
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Main Authors | , , , , |
Format | Journal Article |
Language | English |
Published |
New York, NY
IEEE
01.02.1996
Institute of Electrical and Electronics Engineers |
Subjects | |
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Abstract | Nonlinear gain coefficients due to the effects of carrier heating are derived from the rate equations of carrier energy transfer in semiconductor lasers. We find that, in the modulation responses of semiconductor lasers, stimulated recombination heating will affect the resonant frequency and damping rate in a same form as the effects of spectral hole burning, while free carrier absorption heating will only affect the damping rate. The effects of injection heating and nonstimulated recombination heating are also discussed. The carrier energy relaxation time is calculated from first principles by considering the interactions between carriers and polar optical phonons, deformation potential optical phonons, deformation potential acoustic phonons, piezoelectric acoustic phonons. At the same time, the hot phonon effects associated with the optical phonons are evaluated because their negligible group velocity and finite decay time. We show that the carrier-polar longitudinal optical phonon interaction is the major channel of carrier energy relaxation processes for both electron and holes. We also point out the importance of the longitudinal optical phonon lifetime in evaluating the carrier energy relaxation time. Neglecting the finite decay time of longitudinal optical phonons will significantly underestimate the carrier energy relaxation time, this not only contradicts the experimental results but also severely underestimates the nonlinear gain coefficients due to carrier heating. The effects of spectral hole burning, stimulated recombination heating, and free carrier absorption heating on limiting the modulation bandwidth in semiconductor lasers are also discussed. |
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AbstractList | Nonlinear gain coefficients due to the effects of carrier heating are derived from the rate equations of carrier energy transfer in semiconductor lasers. We find that, in the modulation responses of semiconductor lasers, stimulated recombination heating will affect the resonant frequency and damping rate in a same form as the effects of spectral hole burning, while free carrier absorption heating will only affect the damping rate. The effects of injection heating and nonstimulated recombination heating are also discussed. The carrier energy relaxation time is calculated from first principles by considering the interactions between carriers and polar optical phonons, deformation potential optical phonons, deformation potential acoustic phonons, piezoelectric acoustic phonons. At the same time, the hot phonon effects associated with the optical phonons are evaluated because their negligible group velocity and finite decay time. We show that the carrier-polar longitudinal optical phonon interaction is the major channel of carrier energy relaxation processes for both electron and holes. We also point out the importance of the longitudinal optical phonon lifetime in evaluating the carrier energy relaxation time. Neglecting the finite decay time of longitudinal optical phonons will significantly underestimate the carrier energy relaxation time, this not only contradicts the experimental results but also severely underestimates the nonlinear gain coefficients due to carrier heating. The effects of spectral hole burning, stimulated recombination heating, and free carrier absorption heating on limiting the modulation bandwidth in semiconductor lasers are also discussed. Nonlinear gain coefficients due to the effects of carrier heating are derived from the rate equations of carrier energy transfer in semiconductor lasers. We find that, in the modulation responses of semiconductor lasers, stimulated recombination heating will affect the resonant frequency and damping rate in a same form as the effects of spectral hole burning, while free carrier absorption heating will only affect the damping rate. The effects of injection heating and nonstimulated recombination heating are also discussed. The carrier energy relaxation time is calculated from first principles by considering the interactions between carriers and polar optical phonons, deformation potential optical phonons, deformation potential acoustic phonons, piezoelectric acoustic phonons. At the same time, the hot phonon effects associated with the optical phonons are evaluated because their negligible group velocity and finite decay time. We show that the carrier-polar longitudinal optical phonon interaction is the major channel of carrier energy relaxation processes for both electron and holes. We also point out the importance of the longitudinal optical phonon lifetime in evaluating the carrier energy relaxation time. Neglecting the finite decay time of longitudinal optical phonons will significantly underestimate the carrier energy relaxation time, this not only contradicts the experimental results but also severely underestimates the nonlinear gain coefficients due to carrier heating. The effects of spectral hole burning, stimulated recombination heating, and free carrier absorption heating on limiting the modulation bandwidth in semiconductor lasers are also discussed |
Author | Chin-Yao Tsai Yu-Hwa Lo Chin-Yi Tsai Eastman, L.F. Spencer, R.M. |
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Cites_doi | 10.1109/68.219696 10.1103/PhysRevB.28.7040 10.1088/0034-4885/54/2/001 10.1063/1.351557 10.1109/JQE.1986.1073164 10.1063/1.98515 10.1103/PhysRevB.31.5490 10.1063/1.336070 10.1109/3.60884 10.1109/68.87928 10.1063/1.339990 10.1016/B978-0-08-092570-7.50009-X 10.1016/B978-0-444-89637-7.50007-7 10.1063/1.110785 10.1088/0022-3719/19/13/020 10.1103/PhysRevB.43.4939 10.1109/68.145237 10.1103/PhysRevB.38.3342 10.1103/PhysRevA.45.1853 10.1016/0038-1101(87)90023-2 10.1063/1.357185 10.1103/PhysRevB.46.16148 |
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Keywords | Carriers Relaxation Semiconductor lasers Energy Rate equation Theoretical study Nonlinear problems Gain Heating up |
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References | ref13 ref12 ref23 ref15 ref14 ref20 ref11 ref22 ref10 ref21 ref2 ref1 ref16 ref19 ref18 ref7 ref9 ref4 ref3 ref6 ref5 adachi (ref17) 1985; 58 ridley (ref8) 1993 |
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Snippet | Nonlinear gain coefficients due to the effects of carrier heating are derived from the rate equations of carrier energy transfer in semiconductor lasers. We... |
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SubjectTerms | Absorption Damping Electron optics Exact sciences and technology Fundamental areas of phenomenology (including applications) Heat transfer Heating Lasers Nonlinear equations Nonlinear optics Optics Phonons Physics Radiative recombination Semiconductor lasers Semiconductor lasers; laser diodes |
Title | Nonlinear gain coefficients in semiconductor lasers: effects of carrier heating |
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