The important contribution of photo-generated charges to the silicon nanocrystals photo-charging/discharging-response time at room temperature in MOS-photodetectors

• Published in: Superlattices and microstructures Vol. 94; pp. 93 - 100
• Main Authors: Chatbouri, S., Troudi, M., Fargi, A., Kalboussi, A., Souifi, A.
• Format: Journal Article
• Language: English
• Published: Elsevier Ltd 01.06.2016; Elsevier
• Subjects: C-V characterization; Charging/discharging of silicon nanocrystals; Engineering Sciences; Materials; Micro and nanotechnologies; Microelectronics; MOS-photodetector; Optics; Photo-active traps; Photonic; Physics; Quantum dot; Silicon nanocrystals; Silicon nanocrystals; Charging/discharging of silicon nanocrystals; Quantum dot; Photo-active traps; MOS-photodetector; C-V characterization
• ISSN: 0749-6036; 1096-3677
• DOI: 10.1016/j.spmi.2016.04.005

The results are reported of a detailed investigation into the photogenerated changes that occur in the capacitance–voltage (C–V) characteristics of Metal-Oxide-Semiconductor (MOS) photodetector, having a silicon nanocrystals (Si-ncs) embedded in SiOx=1.5 tunnel oxide layers. In order to study the influence of photon energy on charging/discharging photo-response of nanocrystal-based MOS structures, we have examined photo-capacitance-voltage (photo-CV) measurements at both light intensities 45 μW and 75 μW and wavelengths 436 nm and 595 nm. The photo-CV measurements indicate the important contribution of photo-generated charges to the charging/discharging mechanism. The (Si-ncs) charging/discharging photo-response time is evaluated to be 300 s at wavelength of 595 nm for 75 μW optical power at room temperature. This response time is influenced by the photogenerated-holes lifetime in the Si-ncs. •Investigation into the photogenerated changes that occur in the capacitance–voltage (C–V) characteristics of Metal-Oxide-Semiconductor (MOS) photodetector, having a silicon nanocrystals (Si-ncs) embedded in SiOx=1.5 tunnel oxide layers with a very small area.•Demonstration of the ability of photo-C-V measurements to study the charge state of Si-ncs in an MOS photodetectors and identify the tunneling phenomena between the semiconductor and the Si-ncs layer.•Demonstrated the important contribution of photo-generated charges to the Si-ncs charging/discharging photo-response time.