Growth of Ru2Si3 Polycrystalline Thin Films by Solid Phase Epitaxy in Ru-Si Amorphous Layers

Semiconducting ruthenium silicide (Ru2Si3) polycrystalline thin films were grown by solid phase epitaxy using Ru-Si amorphous layers on Si substrates. The formation of Ru2Si3 phase was confirmed by XRD and Raman measurements when the amorphous layers were annealed at 600−900 °C in a vacuum. The Ru2S...

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Published inDiffusion and defect data. Solid state data. Pt. A, Defect and diffusion forum Vol. 386; pp. 33 - 37
Main Authors Setojima, Kenta, Ikeda, Syuya, Terai, Yoshikazu, Ogi, Kazuya
Format Journal Article
LanguageEnglish
Published Zurich Trans Tech Publications Ltd 01.09.2018
Subjects
Electron density
Electrons
Epitaxial growth
Photoluminescence
Polycrystals
Ruthenium
Silicides
Silicon substrates
Solid phases
Thin films
Semiconducting Silicide
Ru2Si3
Solid Phase Epitaxy
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Summary:Semiconducting ruthenium silicide (Ru2Si3) polycrystalline thin films were grown by solid phase epitaxy using Ru-Si amorphous layers on Si substrates. The formation of Ru2Si3 phase was confirmed by XRD and Raman measurements when the amorphous layers were annealed at 600−900 °C in a vacuum. The Ru2Si3 thin films showed a low electron density of 1 × 1016 cm-3 with a high mobility of 430−940 cm2V-1s-1. Photoluminescence (PL) at ~0.8 eV was observed in the Ru2Si3 films.
Bibliography:Selected, peer reviewed papers from the Fourth Asian School-Conference on Physics and Technology of Nanostructured Materials (ASCO-Nanomat 2018), September 23-28, 2018, Vladivostok, Russia
ISSN:1012-0386
1662-9507
1662-9507
DOI:10.4028/www.scientific.net/DDF.386.33