Monolayer chemical beam etching
We have developed an etching process with real-time counting of each monolayer removed, thus achieving etching with monolayer precision and control. This is an exact reversal of molecular beam epitaxy or more specifically in this case, chemical beam epitaxy (CBE). This new etching capability which w...
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Published in | Journal of crystal growth Vol. 135; no. 3; pp. 377 - 382 |
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Main Authors | , , |
Format | Journal Article |
Language | English |
Published |
Amsterdam
Elsevier B.V
01.02.1994
Elsevier |
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Abstract | We have developed an etching process with real-time counting of each monolayer removed, thus achieving etching with monolayer precision and control. This is an exact reversal of molecular beam epitaxy or more specifically in this case, chemical beam epitaxy (CBE). This new etching capability which we refer to as monolayer chemical beam etching (ML-CBET) is achieved by employing in-situ reflection high energy electron diffraction (RHEED) intensity oscillation monitoring during etching. Etching is accomplished in high vacuum by injecting AsCl
3 directly into a CBE growth chamber impinging on a heated GaAs substrate surface. Having both epitaxial growth and etching integrated in the same process and both capable of ultimate control down to the atomic layer precision represents a very powerful combination. This permits instant switching from growth to etching and vice versa, clean regrown interfaces critical for device applications, direct modification of surface chemistries during etching or growth, and high temperature etching (500–570°C for InP and 500–650°C for GaAs) unachievable in conventional etching processes. The temperature and flux dependence of etching rates are also studied using RHEED oscillations. Results indicate that ML-CBET is predominantly via a layer-by-layer mechanism under the present etching conditions studied. |
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AbstractList | We have developed an etching process with real-time counting of each monolayer removed, thus achieving etching with monolayer precision and control. This is an exact reversal of molecular beam epitaxy or more specifically in this case, chemical beam epitaxy (CBE). This new etching capability which we refer to as monolayer chemical beam etching (ML-CBET) is achieved by employing in-situ reflection high energy electron diffraction (RHEED) intensity oscillation monitoring during etching. Etching is accomplished in high vacuum by injecting AsCl
3 directly into a CBE growth chamber impinging on a heated GaAs substrate surface. Having both epitaxial growth and etching integrated in the same process and both capable of ultimate control down to the atomic layer precision represents a very powerful combination. This permits instant switching from growth to etching and vice versa, clean regrown interfaces critical for device applications, direct modification of surface chemistries during etching or growth, and high temperature etching (500–570°C for InP and 500–650°C for GaAs) unachievable in conventional etching processes. The temperature and flux dependence of etching rates are also studied using RHEED oscillations. Results indicate that ML-CBET is predominantly via a layer-by-layer mechanism under the present etching conditions studied. |
Author | Kapre, R.M. Chiu, T.H. Tsang, W.T. |
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Cites_doi | 10.1016/0039-6028(86)90873-3 10.1016/0022-0248(90)90334-H 10.1063/1.97861 10.1063/1.106477 10.1116/1.582986 10.1016/0022-0248(92)90366-Q 10.1063/1.105648 10.1116/1.583180 10.1103/PhysRevLett.67.124 10.1063/1.96194 10.1016/0022-0248(92)90358-P 10.1116/1.583533 10.1016/0042-207X(83)90578-X 10.1063/1.109486 10.1016/0022-0248(92)90399-4 10.1016/0022-0248(92)90405-8 10.1116/1.583530 |
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Keywords | Real time systems Gallium arsenides Atomic layer method Inorganic compounds Semiconductor materials Epitaxy CBE Binary compounds Surface treatments Etching RHEED Experimental study Chemical beam condensation Kinetics Monitoring |
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Snippet | We have developed an etching process with real-time counting of each monolayer removed, thus achieving etching with monolayer precision and control. This is an... |
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SubjectTerms | Cross-disciplinary physics: materials science; rheology Exact sciences and technology Materials science Methods of deposition of films and coatings; film growth and epitaxy Molecular, atomic, ion, and chemical beam epitaxy Physics Surface treatments |
Title | Monolayer chemical beam etching |
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