Single InAs/GaAs quantum dots: Photocurrent and cross-sectional AFM analysis

• Published in: Physica. E, Low-dimensional systems & nanostructures Vol. 32; no. 1; pp. 183 - 186
• Main Authors: Fasching, G., Schrey, F.F., Roch, T., Andrews, A.M., Brezna, W., Smoliner, J., Strasser, G., Unterrainer, K.
• Format: Journal Article Conference Proceeding
• Language: English
• Published: Amsterdam Elsevier B.V 01.05.2006; Elsevier
• Subjects: Atomic force microscope; Condensed matter: electronic structure, electrical, magnetic, and optical properties; Electron states and collective excitations in thin films, multilayers, quantum wells, mesoscopic and nanoscale systems; Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures; Electronic transport in multilayers, nanoscale materials and structures; Exact sciences and technology; Photocurrent spectroscopy; Physics; Quantum dot; Quantum dots; 68.65.Hb; 71.35.Cc; 68.37.Ps; Quantum dot; Atomic force microscope; Photocurrent spectroscopy; 81.05.Ea; Gallium arsenides; Ground states; Wetting; Quantum dots; Tunnel effect; Line widths; Quantum confined Stark effect; 68.65.Hb; 81.05.Ea; 71.35.Cc; 68.37.Ps; Self-assembled layers; Quantum dot; Photocurrent spectroscopy; Atomic force microscope; Indium arsenides; WKB approximation; Excitons; Electric field effects; Photoconductivity

Photocurrent (PC) spectroscopy is employed to study the carrier escape from self-assembled InAs/GaAs quantum dots (QDs) embedded in a Schottky photodiode structure. As a function of the applied field, we detect a shift of the exciton ground-state transition due to the quantum-confined Stark effect (...