Strained semiconductor structures: simulation of the first stages of the growth

• Published in: Surface science Vol. 276; no. 1; pp. 109 - 121
• Main Authors: Rouhani, M.Djafari, Gué, A.M., Sahlaoui, M., Estève, D.
• Format: Journal Article
• Language: English
• Published: Lausanne Elsevier B.V 01.10.1992; Amsterdam Elsevier Science; New York, NY
• Subjects: Condensed matter: structure, mechanical and thermal properties; Exact sciences and technology; Physics; Solid surfaces and solid-solid interfaces; Surface and interface dynamics and vibrations; Surfaces and interfaces; thin films and whiskers (structure and nonelectronic properties); Thin film structure and morphology; Cadmium Tellurides; Crystal growth; Gallium Arsenides; Monte Carlo method; Semiconductor materials; Strain energy; Mismatch lattice; Force field; Epitaxial film; Experimental study; Inorganic compound

Atomic scale simulation of heteroepitaxial growth has been performed and results of its initial stages reported. The simulation is based on a Monte Carlo technique and uses the valence force field approximation to express the stress energy. The strain is determined by energy minimization, and the st...